Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Packaging | Published | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | RoHS Status | Voltage - Rated | Package / Case | Reach Compliance Code | Frequency | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Gain | Number of Elements | Configuration | Case Connection | Current Rating (Amps) | Polarity/Channel Type | RF/Microwave Device Type | Transistor Application | DS Breakdown Voltage-Min | FET Technology | Transistor Element Material | Current - Test | Transistor Type | Voltage - Test | Power - Output |
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MMRF2007GNR1 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2010 | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 8542.33 | WIDE BAND HIGH POWER | |||||||||||||||||||||||||||||||||||||
A2T21S260W12NR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2006 | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 65V | OM-880X-2L2L | 2.11GHz~2.2GHz | 260 | 40 | 17.9dB | 10μA | 1.6A | LDMOS | 28V | 218W | |||||||||||||||||||||||||||
A2T20H160W04NR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2009 | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 65V | OM780-4 | 1.88GHz~2.025GHz | 260 | 40 | 17dB | 10μA | 400mA | LDMOS (Dual) | 28V | 200W | |||||||||||||||||||||||||||
MRFE6S9125NR1 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2006 | Not For New Designs | 3 (168 Hours) | 4 | EAR99 | ROHS3 Compliant | 66V | TO-270AB | 880MHz | ENHANCEMENT MODE | 8541.29.00.75 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 40 | MRFE6S9125 | YES | R-PDFP-F4 | 225°C | FET General Purpose Power | Not Qualified | 20.2dB | 1 | SINGLE | SOURCE | N-CHANNEL | AMPLIFIER | 66V | METAL-OXIDE SEMICONDUCTOR | SILICON | 950mA | LDMOS | 28V | 27W | |||||||
MHT1004NR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2009 | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 65V | OM-780-2 | 2.45GHz | NOT SPECIFIED | NOT SPECIFIED | 15.2dB | 10μA | 100mA | LDMOS | 32V | 280W | ||||||||||||||||||||||||||||
A2T20H330W24NR6 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2009 | Last Time Buy | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 65V | OM-1230-4L2L | 1.88GHz~2.025GHz | 260 | 40 | 15.9dB | 10μA | 700mA | LDMOS | 28V | 229W | |||||||||||||||||||||||||||
A2T21H360-23NR6 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2006 | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 65V | OM-1230-4L2L | 2.11GHz~2.2GHz | 260 | 40 | 16.8dB | 10μA | 500mA | LDMOS (Dual) | 28V | 373W | |||||||||||||||||||||||||||
AFT09S282NR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2012 | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 70V | OM-780-2 | 960MHz | 8541.29.00.40 | e3 | Matte Tin (Sn) | 260 | 40 | 150°C | FET General Purpose Power | 20dB | Single | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.4A | LDMOS | 28V | 80W | |||||||||||||||||||||
A3T19H455W23SR6 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | Active | Not Applicable | ROHS3 Compliant | 65V | ACP-1230S-4L2S | 1.93GHz~1.99GHz | 260 | 40 | 16.4dB | 10μA | 540mA | LDMOS (Dual) | 30V | 81W | |||||||||||||||||||||||||||||
AFT18S290-13SR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2006 | Active | Not Applicable | EAR99 | ROHS3 Compliant | 65V | NI-880XS-2L4S | 1.96GHz | 8541.29.00.40 | 18.2dB | 2A | LDMOS | 28V | 63W | ||||||||||||||||||||||||||||||
AFT18S230-12NR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2009 | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 65V | OM-780-2L2L | 1.88GHz | 8541.29.00.75 | 260 | 40 | 17.6dB | 1.4A | LDMOS | 28V | 50W | |||||||||||||||||||||||||||
AFT21S220W02SR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2013 | Not For New Designs | Not Applicable | EAR99 | ROHS3 Compliant | 65V | NI-780S | 2.14GHz | 8541.29.00.75 | 260 | 40 | 19.1dB | 1.2A | LDMOS | 28V | 50W | ||||||||||||||||||||||||||||
AFT26H200W03SR6 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2006 | Not For New Designs | Not Applicable | EAR99 | ROHS3 Compliant | 65V | NI-1230-4S | 2.5GHz | 8541.29.00.40 | 260 | 40 | 225°C | FET General Purpose Power | 14.1dB | Single | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 500mA | LDMOS | 28V | 45W | |||||||||||||||||||||||
MMRF1310HSR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2007 | Active | Not Applicable | EAR99 | ROHS3 Compliant | 133V | NI-780S-4 | 230MHz | 8541.29.00.75 | 260 | 40 | 26.5dB | 100mA | LDMOS (Dual) | 50V | 300W | ||||||||||||||||||||||||||||
AFT09S200W02NR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2009 | Not For New Designs | 3 (168 Hours) | 2 | EAR99 | ROHS3 Compliant | 70V | OM-780-2 | 960MHz | ENHANCEMENT MODE | 8541.29.00.40 | e3 | Tin (Sn) | DUAL | FLAT | 260 | 40 | YES | R-PDFP-F2 | 19.2dB | 1 | SINGLE | SOURCE | N-CHANNEL | AMPLIFIER | 70V | METAL-OXIDE SEMICONDUCTOR | SILICON | 1.4A | LDMOS | 28V | 56W | ||||||||||||
AFT23H160-25SR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2006 | Active | Not Applicable | EAR99 | ROHS3 Compliant | 65V | NI-880X-4L4S-8 | 2.3GHz | 8541.29.00.75 | NOT SPECIFIED | NOT SPECIFIED | 16.7dB | 450mA | LDMOS (Dual) | 28V | 32W | |||||||||||||||||||||||||||
A2G22S190-01SR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | Active | Not Applicable | ROHS3 Compliant | 260 | 40 | ||||||||||||||||||||||||||||||||||||||
A2T26H165-24SR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2014 | Active | Not Applicable | ROHS3 Compliant | 65V | NI-780S-4L2L | 2.5GHz | 14.7dB | 400mA | LDMOS (Dual) | 28V | 32W | |||||||||||||||||||||||||||||||
AFT09S200W02GNR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2009 | Last Time Buy | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 70V | OM-780-2G | 960MHz | 8541.29.00.40 | e3 | Tin (Sn) | 260 | 40 | 19.2dB | 1.4A | LDMOS | 28V | 56W | ||||||||||||||||||||||||||
A2V09H300-04NR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2014 | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 105V | OM-780-4L | 720MHz~960MHz | 260 | 40 | 19.7dB | 10μA | 400mA | LDMOS | 48V | 53dBm | |||||||||||||||||||||||||||
MRF8S18210WHSR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2006 | Last Time Buy | Not Applicable | EAR99 | ROHS3 Compliant | 65V | NI-880XS | 1.93GHz | 8541.29.00.75 | 260 | 40 | MRF8S18210 | YES | 125°C | FET General Purpose Power | 17.8dB | Single | METAL-OXIDE SEMICONDUCTOR | 1.3A | N-Channel | 30V | 50W | ||||||||||||||||||||||
MRF8P20140WHSR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2006 | Active | Not Applicable | 4 | EAR99 | ROHS3 Compliant | 65V | NI-780S-4 | 1.88GHz~1.91GHz | ENHANCEMENT MODE | 8541.29.00.75 | FLAT | 260 | 40 | MRF8P20140 | YES | R-CDFP-F4 | 125°C | FET General Purpose Power | Not Qualified | 16dB | 2 | COMMON SOURCE, 2 ELEMENTS | SOURCE | N-CHANNEL | AMPLIFIER | 65V | METAL-OXIDE SEMICONDUCTOR | SILICON | 500mA | LDMOS (Dual) | 28V | 24W | |||||||||||
A2T09VD300NR1 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2015 | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 105V | TO-270-6 Variant, Flat Leads | 920MHz | 8541.29.00.75 | 21.5dB | 1.2A | LDMOS (Dual) | 48V | 79W | |||||||||||||||||||||||||||||
A3T18H400W23SR6 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2006 | Active | Not Applicable | EAR99 | ROHS3 Compliant | 65V | ACP-1230S-4L2S | 1.805GHz~1.88GHz | 260 | 40 | 16.8dB | 10μA | 300mA | LDMOS (Dual) | 28V | 170W | |||||||||||||||||||||||||||
MRF8S9260HSR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2006 | Obsolete | Not Applicable | 2 | EAR99 | ROHS3 Compliant | 70V | NI-880S | 960MHz | ENHANCEMENT MODE | 8541.29.00.75 | DUAL | FLAT | MRF8S9260 | YES | R-CDFP-F2 | 225°C | FET General Purpose Power | Not Qualified | 18.6dB | 1 | SINGLE | SOURCE | N-CHANNEL | AMPLIFIER | 70V | METAL-OXIDE SEMICONDUCTOR | SILICON | 1.7A | LDMOS | 28V | 75W | |||||||||||
MRF8S9260HR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
Tape & Reel (TR) | 2012 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 70V | NI-880 | 960MHz | MRF8S9260 | 18.6dB | 1.7A | LDMOS | 28V | 75W | ||||||||||||||||||||||||||||||||
MRF7S18125AHR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2008 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 65V | SOT-957A | unknown | 1.88GHz | MRF7S18125 | 17dB | 1.1A | LDMOS | 28V | 125W | ||||||||||||||||||||||||||||||
MRFE6S8046GNR1 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2009 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 66V | TO-270BB | unknown | 894MHz | 19.8dB | 300mA | LDMOS | 28V | 35.5W | |||||||||||||||||||||||||||||||
MRF8S9100HSR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2010 | Discontinued | 3 (168 Hours) | ROHS3 Compliant | 70V | NI-780S | 920MHz | MRF8S9100 | 19.3dB | 500mA | LDMOS | 28V | 72W | |||||||||||||||||||||||||||||||
ON5224,118 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
Tape & Reel (TR) | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
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