Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Number of Channels | Subcategory | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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SI7454DP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | No SVHC | 1.04mm | 5.89mm | 34mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 5A | e3 | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 100V | 1 | DRAIN | Single | 1.9W | 16 ns | 4V | 1.9W Ta | 5A | SWITCHING | 35 ns | SILICON | N-Channel | 34m Ω @ 7.8A, 10V | 4V @ 250μA | 30nC @ 10V | 10ns | 10 ns | 20V | 100V | 4 V | 5A Ta | 6V 10V | ±20V | ||||||||||||||||||||||||||||
SUD15N15-95-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | 95mOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 4 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 62W | 8 ns | 2V | 2.7W Ta 62W Tc | 15A | SWITCHING | 17 ns | SILICON | N-Channel | 95m Ω @ 15A, 10V | 2V @ 250μA (Min) | 900pF @ 25V | 25nC @ 10V | 35ns | 30 ns | 20V | 150V | 2 V | 15A Tc | 25A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||
SI7852ADP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 1.12mm | 5.89mm | 17MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | S17-0173_SINGLE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 5W | 16 ns | 4.5V | 5W Ta 62.5W Tc | 30A | 150°C | SWITCHING | 26 ns | SILICON | N-Channel | 17m Ω @ 10A, 10V | 4.5V @ 250μA | 1825pF @ 40V | 45nC @ 10V | 9ns | 9 ns | 20V | 80V | 30A Tc | 60A | 45 mJ | 8V 10V | ±20V | ||||||||||||||||||||||||||
SI4483ADY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.5mm | 4mm | 8.8mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 2.9W | 70 ns | -2.1V | 2.9W Ta 5.9W Tc | 13.5A | SWITCHING | 43 ns | SILICON | P-Channel | 8.8m Ω @ 10A, 10V | 2.6V @ 250μA | 3900pF @ 15V | 135nC @ 10V | 150ns | 28 ns | 25V | 19.2A Tc | 30V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||
SI2365EDS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.4mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | 1 | Single | 1W | 9 ns | -1V | 1W Ta 1.7W Tc | -4.5A | 150°C | SWITCHING | 65 ns | SILICON | P-Channel | 32m Ω @ 4A, 4.5V | 1V @ 250μA | 36nC @ 8V | 32μs | 21 μs | 8V | -20V | 5.9A | 5.9A Tc | 20V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
SI2304BDS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.12mm | 1.4mm | 70mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Power | 1 | Single | 750mW | 7.5 ns | 2.25V | 750mW Ta | 3.2A | 150°C | SWITCHING | 19 ns | SILICON | N-Channel | 70m Ω @ 2.5A, 10V | 3V @ 250μA | 225pF @ 15V | 4nC @ 5V | 12.5ns | 12.5 ns | 20V | 30V | 2.6A | 2.6A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
SI2356DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | 1 | Single | 960mW | 6 ns | 1.5V | 960mW Ta 1.7W Tc | 3.2A | 150°C | SWITCHING | 13 ns | SILICON | N-Channel | 51m Ω @ 3.2A, 10V | 1.5V @ 250μA | 370pF @ 20V | 13nC @ 10V | 52ns | 53 ns | 12V | 40V | 4.3A Tc | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||
SI2318CDS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Digi-Reel® | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.12mm | 1.4mm | 42mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 3 | 1 | 1 | Single | 1.25W | 12 ns | 3V | 1.25W Ta 2.1W Tc | 4.3A | 150°C | SWITCHING | 14 ns | SILICON | N-Channel | 42m Ω @ 4.3A, 10V | 2.5V @ 250μA | 340pF @ 20V | 9nC @ 10V | 8 ns | 20V | 40V | 1.2 V | 5.6A | 5.6A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
SI1308EDL-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | 2.2mm | ROHS3 Compliant | Lead Free | No | 3 | SC-70, SOT-323 | No SVHC | 1.1mm | 1.35mm | 132mOhm | Surface Mount | 124.596154mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | 1 | FET General Purpose Power | 1 | Single | 400mW | 2 ns | 600mV | 400mW Ta 500mW Tc | 1.5A | 150°C | SWITCHING | 8 ns | SILICON | N-Channel | 132m Ω @ 1.4A, 10V | 1.5V @ 250μA | 105pF @ 15V | 4.1nC @ 10V | 9ns | 8 ns | 12V | 30V | 1.4A Tc | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||
SI2333DDS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Digi-Reel® | 2013 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.4mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | 1 | Single | 1.2W | 26 ns | -1V | 1.2W Ta 1.7W Tc | -5A | 150°C | SWITCHING | 0.028Ohm | 45 ns | SILICON | P-Channel | 28m Ω @ 5A, 4.5V | 1V @ 250μA | 1275pF @ 6V | 35nC @ 8V | 24ns | 20 ns | 8V | -12V | 6A | 6A Tc | 12V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||
SI8816EDB-T2-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 44 Weeks | Surface Mount | Cut Tape (CT) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | No | 4 | 4-XFBGA | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Pure Matte Tin (Sn) | BOTTOM | BALL | 260 | 30 | 1 | Single | 15 ns | 600mV | 500mW Ta | 2.3A | SWITCHING | 0.123Ohm | 20 ns | SILICON | N-Channel | 109m Ω @ 1A, 10V | 1.4V @ 250μA | 195pF @ 15V | 8nC @ 10V | 20ns | 10 ns | 12V | 30V | 1.5A | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||
SI2315BDS-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.4mm | 50mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3A | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 12V | 1 | Single | 750mW | 15 ns | -900mV | 750mW Ta | -3A | 150°C | 50 ns | SILICON | P-Channel | 50m Ω @ 3.85A, 4.5V | 900mV @ 250μA | 715pF @ 6V | 15nC @ 4.5V | 35ns | 35 ns | 8V | -12V | -12V | -900 mV | 3A Ta | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||
SI7716ADN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.05mm | 13.5mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 30 | 8 | S-XDSO-C5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.5W | 15 ns | 2.5V | 3.5W Ta 27.7W Tc | 16A | SWITCHING | 30V | 14 ns | SILICON | N-Channel | 13.5m Ω @ 10A, 10V | 2.5V @ 250μA | 846pF @ 15V | 23nC @ 10V | 12ns | 10 ns | 20V | 16A Tc | 30V | 32A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
SI1401EDH-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | No | 6 | 6-TSSOP, SC-88, SOT-363 | Unknown | 34MOhm | Surface Mount | 7.512624mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 30 | 6 | 1 | Other Transistors | 1 | Single | 1.6W | 400mV | 1.6W Ta 2.8W Tc | 4A | SWITCHING | SILICON | P-Channel | 34m Ω @ 5.5A, 4.5V | 1V @ 250μA | 36nC @ 8V | 10V | 4A | 4A Tc | 12V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||
SIA483DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2.05mm | ROHS3 Compliant | 6 | PowerPAK® SC-70-6 | 800μm | 2.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 6 | S-XDSO-N3 | 1 | Other Transistors | 1 | DRAIN | Single | 3.5W | 10 ns | 3.5W Ta 19W Tc | -10A | 150°C | SWITCHING | 27 ns | SILICON | P-Channel | 21m Ω @ 5A, 10V | 2.2V @ 250μA | 1550pF @ 15V | 45nC @ 10V | 60ns | 20 ns | 20V | -30V | 12A Tc | 30V | 40A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
SI2371EDS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 45mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 30 | 1 | 1 | Single | 1.7W | 7 ns | -600mV | 1W Ta 1.7W Tc | -4.8A | 150°C | SWITCHING | 52 ns | SILICON | P-Channel | 45m Ω @ 3.7A, 10V | 1.5V @ 250μA | 35nC @ 10V | 65ns | 62 ns | 12V | -30V | 4.8A Tc | 30V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||
SI3440ADV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | SOT-23-6 Thin, TSOT-23-6 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 3.6W Tc | N-Channel | 380m Ω @ 1.5A, 10V | 4V @ 250μA | 80pF @ 75V | 4nC @ 10V | 2.2A Tc | 150V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1416EDH-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | 2.2mm | ROHS3 Compliant | Lead Free | 6 | 6-TSSOP, SC-88, SOT-363 | unknown | 1mm | 1.35mm | Surface Mount | 28.009329mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 6 | 1 | FET General Purpose Power | 1 | Single | 1.56W | 20 ns | 2.8W Tc | 3.9A | SWITCHING | 0.058Ohm | 25 ns | SILICON | N-Channel | 58m Ω @ 3.1A, 10V | 1.4V @ 250μA | 12nC @ 10V | 60ns | 45 ns | 12V | 30V | 3.9A Tc | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||
SIHG16N50C-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2007 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-247-3 | Unknown | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 260 | 40 | 3 | 1 | FET General Purpose Power | 1 | TO-247AC | Single | 250W | 27 ns | 3V | 250W Tc | 16A | SWITCHING | 29 ns | SILICON | N-Channel | 380m Ω @ 8A, 10V | 5V @ 250μA | 1900pF @ 25V | 68nC @ 10V | 156ns | 31 ns | 30V | 500V | 16A Tc | 40A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
SIHP21N65EF-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-220-3 | Unknown | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | TO-220AB | Single | 22 ns | 208W Tc | 21A | SWITCHING | 68 ns | SILICON | N-Channel | 180m Ω @ 11A, 10V | 4V @ 250μA | 2322pF @ 100V | 106nC @ 10V | 34ns | 68 ns | 20V | 700V | 21A Tc | 650V | 55A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
SIHF12N50C-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Cut Tape (CT) | 2016 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-220-3 Full Pack | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 260 | 40 | 3 | 1 | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 18 ns | 36W Tc | 12A | SWITCHING | 0.555Ohm | 500V | 23 ns | SILICON | N-Channel | 555m Ω @ 4A, 10V | 5V @ 250μA | 1375pF @ 25V | 48nC @ 10V | 35ns | 6 ns | 30V | 12A Tc | 500V | 28A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
IRFB18N50KPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | Through Hole | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | 18A | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 290mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | 1 | 1 | Single | 200W | 22 ns | 5V | 290mOhm | TO-220AB | 220W Tc | 17A | 45 ns | N-Channel | 290mOhm @ 10A, 10V | 5V @ 250μA | 2830pF @ 25V | 120nC @ 10V | 60ns | 30 ns | 30V | 500V | 500V | 5 V | 17A Tc | 500V | 2.83nF | 10V | ±30V | 290 mΩ | |||||||||||||||||||||||||||||||||||
SIHH21N60E-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | Lead Free | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PSSO-N4 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 104W Tc | 20A | SWITCHING | 0.176Ohm | 600V | SILICON | N-Channel | 176m Ω @ 11A, 10V | 4V @ 250μA | 2015pF @ 100V | 83nC @ 10V | 20A Tc | 600V | 226 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
SI6415DQ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 3mm | ROHS3 Compliant | Tin | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | 1mm | 4.4mm | Surface Mount | 157.991892mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 8 | 1 | Other Transistors | 1 | Single | 1.5W | 16 ns | 1.5W Ta | 6.5A | 73 ns | SILICON | P-Channel | 19m Ω @ 6.5A, 10V | 1V @ 250μA (Min) | 70nC @ 10V | 17ns | 17 ns | 20V | -30V | 30V | 30A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
SI7456CDP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | No SVHC | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Pure Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 5W | 1.2V | 5W Ta 35.7W Tc | 27.5A | SWITCHING | 0.0235Ohm | SILICON | N-Channel | 23.5m Ω @ 10A, 10V | 2.8V @ 250μA | 730pF @ 50V | 23nC @ 10V | 20V | 100V | 1.2 V | 27.5A Tc | 50A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
SI4465ADY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.5mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 8 | Other Transistors | 1 | Single | 3W | 33 ns | -450mV | 3W Ta 6.5W Tc | 13.7A | 0.009Ohm | 168 ns | SILICON | P-Channel | 9m Ω @ 14A, 4.5V | 1V @ 250μA | 85nC @ 4.5V | 170ns | 112 ns | 8V | -8V | 20A | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
SI4408DY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | 4.5mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Power | 1 | Single | 1.6W | 42 ns | 1.6W Ta | 21A | SWITCHING | 60 ns | SILICON | N-Channel | 4.5m Ω @ 21A, 10V | 1V @ 250μA (Min) | 32nC @ 4.5V | 42ns | 26 ns | 20V | 20V | 1 V | 14A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
SI7143DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 10MOhm | Surface Mount | 506.605978mg | -50°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | Other Transistors | 1 | DRAIN | Single | 4.2W | 4.2W Ta 35.7W Tc | 16.1A | SWITCHING | SILICON | P-Channel | 10m Ω @ 16.1A, 10V | 2.8V @ 250μA | 2230pF @ 15V | 71nC @ 10V | 20V | -30V | -1.2 V | 35A | 35A Tc | 30V | 60A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
SQD19P06-60L_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2014 | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 46mOhm | TO-252, (D-Pak) | 46W Tc | P-Channel | 55mOhm @ 19A, 10V | 2.5V @ 250μA | 1490pF @ 25V | 41nC @ 10V | 20A Tc | 60V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQJ850EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 1.267mm | 23mOhm | Surface Mount | 506.605978mg | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 45W | 21 ns | 2V | 19mOhm | PowerPAK® SO-8 | 45W Tc | 24A | 175°C | 22 ns | N-Channel | 23mOhm @ 10.3A, 10V | 2.5V @ 250μA | 1225pF @ 30V | 30nC @ 10V | 15ns | 8 ns | 20V | 60V | 2 V | 24A Tc | 60V | 1.225nF | 4.5V 10V | ±20V | 23 mΩ |
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