Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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SIC466EVB-D | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIC462EVB-A | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIC431BEVB-A | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
9 Weeks | Active | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIC431AEVB-A | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
9 Weeks | Active | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIC438BEVB-B | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
9 Weeks | Active | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIC472EVB-A | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIC477EVB-D | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU9110PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.38mm | 1.2Ohm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | 260 | 40 | 3 | 1 | Other Transistors | 1 | DRAIN | Single | 2.5W | 10 ns | -2V | 2.5W Ta 25W Tc | 3.1A | SWITCHING | 15 ns | SILICON | P-Channel | 1.2 Ω @ 1.9A, 10V | 4V @ 250μA | 200pF @ 25V | 8.7nC @ 10V | 27ns | 17 ns | 20V | -100V | 3.1A Tc | 100V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
SIHD7N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Bulk | 2013 | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | 1 | TO-252AA | DRAIN | Single | 78W | 26 ns | 2V | 78W Tc | 7A | SWITCHING | 0.6Ohm | 609V | 48 ns | SILICON | N-Channel | 600m Ω @ 3.5A, 10V | 4V @ 250μA | 680pF @ 100V | 40nC @ 10V | 26ns | 28 ns | 20V | 7A | 7A Tc | 600V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
SIHB12N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Bulk | 2013 | Active | 1 (Unlimited) | 2 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 380MOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 4 | R-PSSO-G2 | 1 | FET General Purpose Powers | 1 | Single | 147W | 14 ns | 2V | 147W Tc | 12A | SWITCHING | 600V | 35 ns | SILICON | N-Channel | 380m Ω @ 6A, 10V | 4V @ 250μA | 937pF @ 100V | 58nC @ 10V | 38ns | 38 ns | 20V | 12A Tc | 600V | 27A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
SIHA14N60E-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | E | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 Full Pack | 18.1mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | NO | R-PSFM-T3 | 1 | 1 | TO-220AB | 147W | 15 ns | 147W Tc | 13A | 150°C | SWITCHING | 0.309Ohm | 35 ns | SILICON | N-Channel | 309m Ω @ 7A, 10V | 4V @ 250μA | 1205pF @ 100V | 64nC @ 10V | 30V | 600V | 13A Tc | 32A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHA20N50E-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2017 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-220-3 Full Pack | Unknown | 160mOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 4V | 34W Tc | 19A | SWITCHING | SILICON | N-Channel | 184m Ω @ 10A, 10V | 4V @ 250μA | 1640pF @ 100V | 92nC @ 10V | 550V | 19A Tc | 500V | 42A | 204 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
SIHG70N60EF-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AC | DRAIN | 520W Tc | 70A | SWITCHING | 0.038Ohm | 600V | SILICON | N-Channel | 38m Ω @ 35A, 10V | 4V @ 250μA | 7500pF @ 100V | 380nC @ 10V | 70A Tc | 600V | 229A | 1706 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2392ADS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 1.25W | 8 ns | 3V | 1.25W Ta 2.5W Tc | 2.2A | 150°C | SWITCHING | 10 ns | SILICON | N-Channel | 126m Ω @ 2A, 10V | 3V @ 250μA | 196pF @ 50V | 10.4nC @ 10V | 20V | 100V | 3.1A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
SI4436DY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.5mm | 4mm | 36mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 40 | 8 | 1 | FET General Purpose Powers | Not Qualified | 1 | Single | 2.5W | 10 ns | 1.5V | 2.5W Ta 5W Tc | 8A | SWITCHING | 60V | 25 ns | SILICON | N-Channel | 36m Ω @ 4.6A, 10V | 2.5V @ 250μA | 1100pF @ 30V | 32nC @ 10V | 15ns | 10 ns | 20V | 8A | 8A Tc | 60V | 25A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
SI4162DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | 7.9mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | 1 | Single | 5W | 20 ns | 1V | 2.5W Ta 5W Tc | 13.6A | SWITCHING | 25 ns | SILICON | N-Channel | 7.9m Ω @ 20A, 10V | 3V @ 250μA | 1155pF @ 15V | 30nC @ 10V | 15ns | 10 ns | 20V | 30V | 1 V | 19.3A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRFP240PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | Through Hole | 150°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | 20A | No | 3 | TO-247-3 | Unknown | 5.45mm | 25.11mm | 5.31mm | 180mOhm | Through Hole | 38.000013g | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | 1 | 1 | Single | 150W | 14 ns | 4V | 180mOhm | TO-247-3 | 150W Tc | 610 ns | 20A | 150°C | 45 ns | N-Channel | 180mOhm @ 12A, 10V | 4V @ 250μA | 1300pF @ 25V | 70nC @ 10V | 51ns | 36 ns | 20V | 200V | 200V | 4 V | 20A Tc | 200V | 1.3nF | 10V | ±20V | 180 mΩ | |||||||||||||||||||||||||||||||||||
SISA04DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | 3.1496mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | Unknown | 1.0668mm | 3.1496mm | 2.15mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | S-PDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 3.7W | 24 ns | 1.1V | 3.7W Ta 52W Tc | 40A | SWITCHING | 30 ns | SILICON | N-Channel | 2.15m Ω @ 15A, 10V | 2.2V @ 250μA | 3595pF @ 15V | 77nC @ 10V | 20 ns | 20V | 30V | 1.1 V | 40A Tc | 20 mJ | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||
SI7386DP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | FAST SWITCHING | PowerPAK® SO-8 | No SVHC | 1.04mm | 5.89mm | 7mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 1.8W | 12 ns | 2V | 1.8W Ta | 19A | SWITCHING | 35 ns | SILICON | N-Channel | 7m Ω @ 19A, 10V | 2.5V @ 250μA | 18nC @ 4.5V | 9ns | 10 ns | 20V | 30V | 12A Ta | 50A | 32 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
SIRC10DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2018 | TrenchFET® Gen IV | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.17mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | S17-0173-Single | NOT SPECIFIED | NOT SPECIFIED | 1 | 3.6W | 10 ns | 43W Tc | 23.9A | 150°C | 15 ns | N-Channel | 3.5m Ω @ 10A, 10V | 2.4V @ 250μA | 1873pF @ 15V | 36nC @ 10V | 30V | Schottky Diode (Body) | 60A Tc | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7629DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | 4.6mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | S-XDSO-C5 | 1 | Other Transistors | 1 | DRAIN | Single | 3.7W | 3.7W Ta 52W Tc | 21.3A | SWITCHING | 20V | SILICON | P-Channel | 4.6m Ω @ 20A, 10V | 1.5V @ 250μA | 5790pF @ 10V | 177nC @ 10V | 12V | 35A | 35A Tc | 20V | 20 mJ | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||
SI4101DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 6W | 6W Tc | 25.7A | SWITCHING | 0.006Ohm | 80 ns | SILICON | P-Channel | 6m Ω @ 15A, 10V | 2.5V @ 250μA | 8190pF @ 15V | 203nC @ 10V | 9ns | 11 ns | 20V | -30V | 25.7A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRFR9010TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | Other Transistors | 1 | DRAIN | Single | 25W | 6.1 ns | 25W Tc | 5.3A | SWITCHING | 0.5Ohm | 13 ns | SILICON | P-Channel | 500m Ω @ 2.8A, 10V | 4V @ 250μA | 240pF @ 25V | 9.1nC @ 10V | 47ns | 35 ns | 20V | -50V | 5.3A Tc | 50V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
SIB452DK-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 1.6mm | ROHS3 Compliant | Lead Free | Tin | No | 6 | PowerPAK® SC-75-6L | Unknown | 750μm | 1.6mm | 2.4Ohm | Surface Mount | 95.991485mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 40 | 6 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.4W | 12 ns | 1.5V | 2.4W Ta 13W Tc | 1.5A | SWITCHING | 30 ns | SILICON | N-Channel | 2.4 Ω @ 500mA, 4.5V | 1.5V @ 250μA | 135pF @ 50V | 6.5nC @ 10V | 16ns | 15 ns | 16V | 190V | 1.5A Tc | 1.8V 4.5V | ±16V | ||||||||||||||||||||||||||||||||||
SISS27DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2014 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8S | 830μm | Surface Mount | -50°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | S-PDSO-N5 | 1 | 1 | DRAIN | Single | 4.8W | 16 ns | 4.8W Ta 57W Tc | -23A | 150°C | SWITCHING | 0.0056Ohm | 65 ns | SILICON | P-Channel | 5.6m Ω @ 15A, 10V | 2.2V @ 250μA | 5250pF @ 15V | 140nC @ 10V | 45ns | 20 ns | 20V | -30V | 50A | 50A Tc | 30V | 200A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
SI7461DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.17mm | 5.89mm | 6.25mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | S17-0173-Single | e3 | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 1.9W | 20 ns | -3V | 1.9W Ta | -14.4A | 150°C | 60V | 205 ns | SILICON | P-Channel | 14.5m Ω @ 14.4A, 10V | 3V @ 250μA | 190nC @ 10V | 20ns | 20 ns | 20V | 8.6A Ta | 60V | 60A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
IRFD210PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | 600mA | No | 4 | AVALANCHE RATED | 4-DIP (0.300, 7.62mm) | Unknown | 3.37mm | 6.29mm | 1.5Ohm | Through Hole | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | 4 | R-PDIP-T3 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 1W | 8.2 ns | 4V | 1W Ta | 600mA | SWITCHING | 14 ns | SILICON | N-Channel | 1.5 Ω @ 360mA, 10V | 4V @ 250μA | 140pF @ 25V | 8.2nC @ 10V | 17ns | 17 ns | 20V | 200V | 0.6A | 600mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
SUD50P06-15-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | 2.507mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 30 | 4 | YES | R-PSSO-G2 | 1 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.5W | 15 ns | 2.5W Ta 113W Tc | -50A | 150°C | SWITCHING | 175 ns | SILICON | P-Channel | 15m Ω @ 17A, 10V | 3V @ 250μA | 4950pF @ 25V | 165nC @ 10V | 20V | -60V | 50A Tc | 60V | 80A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
SI5457DC-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-SMD, Flat Lead | 36mOhm | Surface Mount | 84.99187mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 30 | 8 | 1 | 1 | Single | 2.3W | 25 ns | 5.7W Tc | 6A | SWITCHING | 30 ns | SILICON | P-Channel | 36m Ω @ 4.9A, 4.5V | 1.4V @ 250μA | 1000pF @ 10V | 38nC @ 10V | 20ns | 12 ns | 12V | -20V | 6A | 6A Tc | 20V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
SIA441DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | 2.05mm | ROHS3 Compliant | No | 6 | PowerPAK® SC-70-6 | Unknown | 750μm | 2.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | 6 | S-PDSO-N3 | 1 | Other Transistors | 1 | DRAIN | Single | 3.5W | 19W Tc | 6.6A | SWITCHING | 0.047Ohm | SILICON | P-Channel | 47m Ω @ 4.4A, 10V | 2.2V @ 250μA | 890pF @ 20V | 35nC @ 10V | 20V | -40V | -1.2 V | 12A Tc | 40V | 30A | 8.5 mJ | 4.5V 10V | ±20V |
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