Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Isolation Voltage | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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SQ2389ES-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | unknown | 1.12mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 3W | 7 ns | 2V | 3W Tc | -4.1A | 175°C | 16 ns | SILICON | P-Channel | 94m Ω @ 10A, 10V | 2.5V @ 250μA | 420pF @ 20V | 12nC @ 10V | 12ns | 4 ns | 20V | -40V | 4.1A Tc | 40V | 54 pF | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
SI4848ADY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2018 | TrenchFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | unknown | 1.75mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | 2.5W | 8 ns | 5W Tc | 3.9A | 150°C | 12 ns | N-Channel | 84m Ω @ 3.9A, 10V | 4V @ 250μA | 335pF @ 75V | 9.5nC @ 10V | 20V | 150V | 5.5A Tc | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQS405ENW-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® 1212-8 | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 39W Tc | P-Channel | 20m Ω @ 13.5A, 4.5V | 1V @ 250μA | 2650pF @ 6V | 75nC @ 8V | 16A Tc | 12V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQJ868EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 48W Tc | N-Channel | 7.35m Ω @ 14A, 10V | 3.5V @ 250μA | 2450pF @ 20V | 55nC @ 10V | 58A Tc | 40V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR9110TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Active | 1 (Unlimited) | 150°C | -55°C | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | 1.2Ohm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 2.5W | 10 ns | -2V | 1.2Ohm | D-Pak | 2.5W Ta 25W Tc | 3.1A | 15 ns | P-Channel | 1.2Ohm @ 1.9A, 10V | 4V @ 250μA | 200pF @ 25V | 8.7nC @ 10V | 27ns | 17 ns | 20V | -100V | 3.1A Tc | 100V | 200pF | 10V | ±20V | 1.2 Ω | |||||||||||||||||||||||||||||||||||||||||
SIR474DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | 1.04mm | 5.89mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.9W | 14 ns | 3.9W Ta 29.8W Tc | 20A | SWITCHING | 0.0095Ohm | 19 ns | SILICON | N-Channel | 9.5m Ω @ 10A, 10V | 2.2V @ 250μA | 985pF @ 15V | 27nC @ 10V | 12ns | 9 ns | 20V | 30V | 20A Tc | 50A | 20 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||
SQJA06EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | PowerPAK® SO-8 | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 55W | 15 ns | 7.2mOhm | PowerPAK® SO-8 | 55W Tc | 57A | 175°C | 23 ns | N-Channel | 8.7mOhm @ 10A, 10V | 3.5V @ 250μA | 2800pF @ 25V | 45nC @ 10V | 20V | 60V | 57A Tc | 60V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2319DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 750mW | 7 ns | -3V | 750mW Ta | -2.3A | SWITCHING | 0.082Ohm | 40V | 25 ns | SILICON | P-Channel | 82m Ω @ 3A, 10V | 3V @ 250μA | 470pF @ 20V | 17nC @ 10V | 15ns | 25 ns | 20V | -3 V | 2.3A Ta | 40V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
SI1467DH-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 6 | 6-TSSOP, SC-88, SOT-363 | Surface Mount | 7.512624mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 6 | 1 | Other Transistors | 1 | Single | 16 ns | 1.5W Ta 2.78W Tc | 2.7A | 0.09Ohm | 20V | 36 ns | SILICON | P-Channel | 90m Ω @ 2A, 4.5V | 1V @ 250μA | 561pF @ 10V | 13.5nC @ 4.5V | 43ns | 43 ns | 8V | 3A | 2.7A Tc | 20V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
SI4435DDY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | 24mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | 1 | Single | 2.5W | 42 ns | -3V | 2.5W Ta 5W Tc | -11.4A | SWITCHING | 40 ns | SILICON | P-Channel | 24m Ω @ 9.1A, 10V | 3V @ 250μA | 1350pF @ 15V | 50nC @ 10V | 35ns | 16 ns | 20V | -30V | 11.4A Tc | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
SI4434DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | 8 | 1 | 1 | Single | 1.56W | 16 ns | 1.56W Ta | 2.1A | SWITCHING | 47 ns | SILICON | N-Channel | 155m Ω @ 3A, 10V | 4V @ 250μA | 50nC @ 10V | 23ns | 19 ns | 20V | 250V | 2.1A Ta | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFP9240PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 1997 | Active | 1 (Unlimited) | Through Hole | 150°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | Tin | -12A | No | 3 | TO-247-3 | Unknown | 25.11mm | 5.31mm | 500mOhm | Through Hole | 38.000013g | -55°C~150°C TJ | -200V | MOSFET (Metal Oxide) | 1 | 1 | Single | 150W | 14 ns | -4V | 500mOhm | TO-247-3 | 150W Tc | 300 ns | -12A | 150°C | 39 ns | P-Channel | 500mOhm @ 7.2A, 10V | 4V @ 250μA | 1200pF @ 25V | 44nC @ 10V | 43ns | 38 ns | 20V | -200V | -200V | -4 V | 12A Tc | 200V | 1.2nF | 10V | ±20V | 500 mΩ | |||||||||||||||||||||||||||||||||
SI8821EDB-T2-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Surface Mount | Cut Tape (CT) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | No | 4 | 4-XFBGA, CSPBGA | Unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Pure Matte Tin (Sn) | BOTTOM | BALL | 260 | 30 | 1 | Single | -600mV | 500mW Ta | -2.3A | SWITCHING | 0.15Ohm | 30V | 40 ns | SILICON | P-Channel | 135m Ω @ 1A, 4.5V | 1.3V @ 250μA | 440pF @ 15V | 17nC @ 10V | 20ns | 15 ns | 12V | 30V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
SI3493BDV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 Thin, TSOT-23-6 | 1mm | 1.65mm | 27.5mOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 6 | 1 | Other Transistors | 1 | Single | 2.08W | 22 ns | 2.08W Ta 2.97W Tc | 7A | SWITCHING | 75 ns | SILICON | P-Channel | 27.5m Ω @ 7A, 4.5V | 900mV @ 250μA | 1805pF @ 10V | 43.5nC @ 5V | 72ns | 84 ns | 8V | -20V | 8A | 8A Tc | 20V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
SQ4080EY-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 8 | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | unknown | 1.75mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | YES | R-PDSO-G8 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 7.1W | 11.4 ns | 7.1W Tc | 18A | 175°C | 0.085Ohm | 19.1 ns | SILICON | N-Channel | 85m Ω @ 10A, 10V | 4V @ 250μA | 1590pF @ 75V | 33nC @ 10V | 20V | 150V | 18A Tc | 55 pF | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
SIR818DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | 2.8mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | R-PDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 5.2W | 14 ns | 5.2W Ta 69W Tc | 50A | SWITCHING | 36 ns | SILICON | N-Channel | 2.8m Ω @ 20A, 10V | 2.4V @ 250μA | 3660pF @ 15V | 95nC @ 10V | 15ns | 10 ns | 20V | 30V | 50A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRF9Z34STRLPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | 140mOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 4 | R-PSSO-G2 | 1 | 1 | Single | 3.7W | 18 ns | 3.7W Ta 88W Tc | 18A | SWITCHING | 20 ns | SILICON | P-Channel | 140m Ω @ 11A, 10V | 4V @ 250μA | 1100pF @ 25V | 34nC @ 10V | 120ns | 58 ns | 20V | -60V | 18A Tc | 60V | 72A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRF530SPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2014 | Active | 1 (Unlimited) | 175°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 160mOhm | Surface Mount | 1.946308g | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 3.7W | 10 ns | 4V | 160mOhm | TO-263 (D2Pak) | 3.7W Ta 88W Tc | 14A | 23 ns | N-Channel | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 670pF @ 25V | 26nC @ 10V | 34ns | 24 ns | 20V | 4 V | 14A Tc | 100V | 670pF | 10V | ±20V | 160 mΩ | ||||||||||||||||||||||||||||||||||||||||
IRF9Z24PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 175°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Unknown | 19.89mm | 4.7mm | 280mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 60W | 13 ns | -4V | 280mOhm | TO-220AB | 60W Tc | 11A | 175°C | 15 ns | P-Channel | 280mOhm @ 6.6A, 10V | 4V @ 250μA | 570pF @ 25V | 19nC @ 10V | 68ns | 29 ns | 20V | -60V | -4 V | 11A Tc | 60V | 570pF | 10V | ±20V | 280 mΩ | |||||||||||||||||||||||||||||||||||||||
IRF610SPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2004 | Active | 1 (Unlimited) | 150°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 1.5Ohm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 3W | 8.2 ns | 4V | 1.5Ohm | D2PAK | 3W Ta 36W Tc | 3.3A | 14 ns | N-Channel | 1.5Ohm @ 2A, 10V | 4V @ 250μA | 140pF @ 25V | 8.2nC @ 10V | 17ns | 8.9 ns | 20V | 200V | 4 V | 3.3A Tc | 200V | 140pF | 10V | ±20V | 1.5 Ω | ||||||||||||||||||||||||||||||||||||||||
IRFIZ34GPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.63mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack, Isolated Tab | Unknown | 9.8mm | 4.83mm | 50mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | 260 | 40 | 3 | 1 | 1 | TO-220AB | Single | 42W | 13 ns | 4V | 42W Tc | 20A | SWITCHING | 60V | 29 ns | SILICON | N-Channel | 50m Ω @ 12A, 10V | 4V @ 250μA | 1200pF @ 25V | 46nC @ 10V | 100ns | 52 ns | 20V | 4 V | 20A Tc | 60V | 80A | 10V | ±20V | |||||||||||||||||||||||||||||||||
IRFZ40PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.41mm | ROHS3 Compliant | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | 260 | 40 | 3 | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 126W | 15 ns | 4V | 150W Tc | 35A | SWITCHING | 0.028Ohm | 60V | 35 ns | SILICON | N-Channel | 28m Ω @ 31A, 10V | 4V @ 250μA | 1900pF @ 25V | 67nC @ 10V | 25ns | 12 ns | 20V | 4 V | 50A | 50A Tc | 60V | 200A | 10V | ±20V | |||||||||||||||||||||||||||||||
SQP90142E_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | TO-220-3 | 19.31mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 250W | 17 ns | 12.7mOhm | TO-220AB | 250W Tc | 78.5A | 175°C | 39 ns | N-Channel | 15.3mOhm @ 20A, 10V | 3.5V @ 250μA | 4200pF @ 25V | 85nC @ 10V | 20V | 200V | 78.5A Tc | 200V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF730APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | Tin | 5.5A | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 1Ohm | Through Hole | 6.000006g | -55°C~150°C TJ | 400V | MOSFET (Metal Oxide) | 1 | 1 | Single | 74W | 10 ns | 4.5V | 1Ohm | TO-220AB | 74W Tc | 550 ns | 5.5A | 20 ns | N-Channel | 1Ohm @ 3.3A, 10V | 4.5V @ 250μA | 600pF @ 25V | 22nC @ 10V | 22ns | 16 ns | 30V | 400V | 4.5 V | 5.5A Tc | 400V | 600pF | 10V | ±30V | 1 Ω | ||||||||||||||||||||||||||||||||||||
IRLR014PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2005 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | 200mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 2.5W | 9.3 ns | 2V | 2.5W Ta 25W Tc | 7.7A | SWITCHING | 17 ns | SILICON | N-Channel | 200m Ω @ 4.6A, 5V | 2V @ 250μA | 400pF @ 25V | 8.4nC @ 5V | 110ns | 26 ns | 10V | 60V | 2 V | 7.7A Tc | 27.4 mJ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||
IRFR220PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2009 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 4.8A | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | 800mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 42W | 7.2 ns | 4V | 2.5W Ta 42W Tc | 4.8A | SWITCHING | 19 ns | SILICON | N-Channel | 800m Ω @ 2.9A, 10V | 4V @ 250μA | 260pF @ 25V | 14nC @ 10V | 22ns | 13 ns | 20V | 200V | 4 V | 4.8A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||
IRFR110PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2006 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 4.7A | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | 540mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | 1 | TO-252AA | DRAIN | Single | 25W | 6.9 ns | 4V | 2.5W Ta 25W Tc | 200 ns | 4.3A | SWITCHING | 15 ns | SILICON | N-Channel | 540m Ω @ 2.6A, 10V | 4V @ 250μA | 180pF @ 25V | 8.3nC @ 10V | 16ns | 9.4 ns | 20V | 100V | 4 V | 4.3A Tc | 75 mJ | 10V | ±20V | |||||||||||||||||||||||||||||
IRFI640GPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2009 | Active | 1 (Unlimited) | 150°C | -55°C | 10.63mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack, Isolated Tab | Unknown | 9.8mm | 4.83mm | 180mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 40W | 14 ns | 4V | 180mOhm | TO-220-3 | 40W Tc | 9.8A | 2.5kV | 45 ns | N-Channel | 180mOhm @ 5.9A, 10V | 4V @ 250μA | 1300pF @ 25V | 70nC @ 10V | 51ns | 36 ns | 20V | 200V | 9.8A Tc | 200V | 1.3nF | 10V | ±20V | 180 mΩ | ||||||||||||||||||||||||||||||||||||||||
IRFU9010PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | -5.3A | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | 500mOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | 260 | 40 | 3 | Other Transistors | 1 | DRAIN | Single | 6.1 ns | 25W Tc | 5.3A | SWITCHING | 13 ns | SILICON | P-Channel | 500m Ω @ 2.8A, 10V | 4V @ 250μA | 240pF @ 25V | 9.1nC @ 10V | 47ns | 35 ns | 50V | 5.3A Tc | 21A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
SIHP8N50D-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | 10.51mm | ROHS3 Compliant | Tin | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.65mm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Powers | 1 | TO-220AB | Single | 156W | 13 ns | 3V | 156W Tc | 8.7A | SWITCHING | 0.85Ohm | 500V | 17 ns | SILICON | N-Channel | 850m Ω @ 4A, 10V | 5V @ 250μA | 527pF @ 100V | 30nC @ 10V | 16ns | 11 ns | 30V | 8.7A Tc | 500V | 29 mJ | 10V | ±30V |
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