Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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SIHB28N60EF-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Tube | 2015 | Active | 1 (Unlimited) | 2 | 10.67mm | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | Surface Mount | 1.946308g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | Single | 24 ns | 250W Tc | 28A | SWITCHING | 600V | 82 ns | SILICON | N-Channel | 123m Ω @ 14A, 10V | 4V @ 250μA | 2714pF @ 100V | 120nC @ 10V | 40ns | 39 ns | 20V | 28A Tc | 600V | 75A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
SIHG24N65E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2013 | Active | 1 (Unlimited) | 150°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Unknown | 20.7mm | 5.31mm | 145mOhm | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 250W | 24 ns | 2V | 145mOhm | TO-247AC | 250W Tc | 24A | 70 ns | N-Channel | 145mOhm @ 12A, 10V | 4V @ 250μA | 2740pF @ 100V | 122nC @ 10V | 84ns | 69 ns | 20V | 650V | 24A Tc | 650V | 2.74nF | 10V | ±30V | 145 mΩ | ||||||||||||||||||||||||||||||||||||||
SIHG33N65EF-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AC | 4V | 313W Tc | 31.6A | SWITCHING | 0.109Ohm | 650V | SILICON | N-Channel | 109m Ω @ 16.5A, 10V | 4V @ 250μA | 4026pF @ 100V | 171nC @ 10V | 31.6A Tc | 650V | 508 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
SIHFR1N60A-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2016 | Active | 1 (Unlimited) | EAR99 | Non-RoHS Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 36W | 36W Tc | 1.4A | N-Channel | 7 Ω @ 840mA, 10V | 4V @ 250μA | 229pF @ 25V | 14nC @ 10V | 30V | 1.4A Tc | 600V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQD50N04-4M5L_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | 260 | 40 | 4 | R-PSSO-G2 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 136W | 9 ns | 1.5V | 136W Tc | 50A | 0.006Ohm | 40V | 39 ns | SILICON | N-Channel | 3.5m Ω @ 20A, 10V | 2.5V @ 250μA | 5860pF @ 25V | 130nC @ 10V | 11ns | 11 ns | 20V | 50A Tc | 40V | 200A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
SIHD5N50D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Cut Tape (CT) | 2015 | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | R-PSSO-G2 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 12 ns | 104W Tc | 5.3A | SWITCHING | 500V | 14 ns | SILICON | N-Channel | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 325pF @ 100V | 20nC @ 10V | 11ns | 11 ns | 30V | 5.3A Tc | 500V | 10A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
IRFU220PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 4.8A | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.38mm | 800mOhm | Through Hole | 329.988449mg | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | 260 | 30 | 3 | 1 | FET General Purpose Powers | Not Qualified | 1 | DRAIN | Single | 2.5W | 7.2 ns | 4V | 2.5W Ta 42W Tc | 4.8A | SWITCHING | 19 ns | SILICON | N-Channel | 800m Ω @ 2.9A, 10V | 4V @ 250μA | 260pF @ 25V | 14nC @ 10V | 22ns | 13 ns | 20V | 200V | 4.8A Tc | 10V | ±20V | |||||||||||||||||||||||||||||
IRLU024PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 3 | LOGIC LEVEL COMPATIBLE | TO-251-3 Short Leads, IPak, TO-251AA | unknown | 6.22mm | 2.39mm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 260 | 40 | 3 | 1 | Not Qualified | 1 | DRAIN | Single | 2.5W | 11 ns | 2.5W Ta 42W Tc | 14A | SWITCHING | 23 ns | SILICON | N-Channel | 100m Ω @ 8.4A, 5V | 2V @ 250μA | 870pF @ 25V | 18nC @ 5V | 110ns | 41 ns | 10V | 60V | 14A Tc | 56A | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||
IRFU430APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 3 | 6.73mm | ROHS3 Compliant | Lead Free | 5A | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | 1.7Ohm | Through Hole | 329.988449mg | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | 260 | 40 | 3 | 1 | 1 | DRAIN | Single | 110W | 8.7 ns | 4.5V | 110W Tc | 5A | SWITCHING | 17 ns | SILICON | N-Channel | 1.7 Ω @ 3A, 10V | 4.5V @ 250μA | 490pF @ 25V | 24nC @ 10V | 27ns | 16 ns | 30V | 500V | 5A | 5A Tc | 20A | 10V | ±30V | |||||||||||||||||||||||||||||||
IRFD113PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2017 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 4 | 4-DIP (0.300, 7.62mm) | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | 2 | R-PDIP-T2 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 10 ns | 1W Tc | 800mA | SWITCHING | 0.8Ohm | 60V | 15 ns | SILICON | N-Channel | 800m Ω @ 800mA, 10V | 4V @ 250μA | 200pF @ 25V | 7nC @ 10V | 15ns | 10 ns | 20V | 0.8A | 800mA Tc | 60V | 25 pF | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
SIHH11N65EF-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 130W Tc | 11A | N-Channel | 382m Ω @ 6A, 10V | 4V @ 250μA | 1243pF @ 100V | 70nC @ 10V | 11A Tc | 650V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHP25N40D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Cut Tape (CT) | 2011 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | 3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 21 ns | 278W Tc | 25A | SWITCHING | 0.17Ohm | 400V | 40 ns | SILICON | N-Channel | 170m Ω @ 13A, 10V | 5V @ 250μA | 1707pF @ 100V | 88nC @ 10V | 57ns | 37 ns | 30V | 25A Tc | 400V | 78A | 556 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
SIHP23N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Cut Tape (CT) | 2014 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-220-3 | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | TO-220AB | Single | 22 ns | 227W Tc | 23A | SWITCHING | 66 ns | SILICON | N-Channel | 158m Ω @ 12A, 10V | 4V @ 250μA | 2418pF @ 100V | 95nC @ 10V | 38ns | 34 ns | 20V | 650V | 23A Tc | 600V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
SI6415DQ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 3mm | ROHS3 Compliant | Tin | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | 1mm | 4.4mm | Surface Mount | 157.991892mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 8 | 1 | Other Transistors | 1 | Single | 1.5W | 16 ns | 1.5W Ta | 6.5A | 73 ns | SILICON | P-Channel | 19m Ω @ 6.5A, 10V | 1V @ 250μA (Min) | 70nC @ 10V | 17ns | 17 ns | 20V | -30V | 30V | 30A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
SI7456CDP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | No SVHC | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Pure Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 5W | 1.2V | 5W Ta 35.7W Tc | 27.5A | SWITCHING | 0.0235Ohm | SILICON | N-Channel | 23.5m Ω @ 10A, 10V | 2.8V @ 250μA | 730pF @ 50V | 23nC @ 10V | 20V | 100V | 1.2 V | 27.5A Tc | 50A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
SI4465ADY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.5mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 8 | Other Transistors | 1 | Single | 3W | 33 ns | -450mV | 3W Ta 6.5W Tc | 13.7A | 0.009Ohm | 168 ns | SILICON | P-Channel | 9m Ω @ 14A, 4.5V | 1V @ 250μA | 85nC @ 4.5V | 170ns | 112 ns | 8V | -8V | 20A | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
SI4408DY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | 4.5mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Power | 1 | Single | 1.6W | 42 ns | 1.6W Ta | 21A | SWITCHING | 60 ns | SILICON | N-Channel | 4.5m Ω @ 21A, 10V | 1V @ 250μA (Min) | 32nC @ 4.5V | 42ns | 26 ns | 20V | 20V | 1 V | 14A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
SIRA52DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 48W Tc | 60A | N-Channel | 1.7m Ω @ 15A, 10V | 2.4V @ 250μA | 7150pF @ 20V | 150nC @ 10V | 60A Tc | 40V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQ4153EY-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | unknown | 1.75mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G8 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 7.1W | 31 ns | 7.1W Tc | -25A | 175°C | 0.00832Ohm | 310 ns | SILICON | P-Channel | 8.32m Ω @ 14A, 4.5V | 900mV @ 250μA | 11000pF @ 6V | 151nC @ 4.5V | 8V | -12V | 25A Tc | 12V | 3600 pF | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
IRFRC20TRRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | yes | Active | 1 (Unlimited) | 2 | 6.73mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 2.5W | 10 ns | 2.5W Ta 42W Tc | 2A | SWITCHING | 600V | 30 ns | SILICON | N-Channel | 4.4 Ω @ 1.2A, 10V | 4V @ 250μA | 350pF @ 25V | 18nC @ 10V | 23ns | 25 ns | 20V | 2A | 2A Tc | 600V | 8A | 74 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||
SI4425BDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 30 | 8 | 1 | Other Transistors | 1 | Single | 1.5W | 15 ns | -400mV | 1.5W Ta | -11.4A | SWITCHING | 30V | 100 ns | SILICON | P-Channel | 12m Ω @ 11.4A, 10V | 3V @ 250μA | 100nC @ 10V | 13ns | 13 ns | 20V | 8.8A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
SIHD3N50D-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tube | 2006 | Active | 1 (Unlimited) | 2 | 6.73mm | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.38mm | 6.22mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | FET General Purpose Powers | 1 | TO-252AA | DRAIN | Single | 104W | 12 ns | 3V | 69W Tc | 3A | SWITCHING | 11 ns | SILICON | N-Channel | 3.2 Ω @ 2.5A, 10V | 5V @ 250μA | 175pF @ 100V | 12nC @ 10V | 9ns | 13 ns | 30V | 500V | 3A | 3A Tc | 5.5A | 9 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
IRFPG30PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 150°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Unknown | 20.7mm | 5.31mm | 5Ohm | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 125W | 12 ns | 4V | 5Ohm | TO-247-3 | 125W Tc | 3.1A | 89 ns | N-Channel | 5Ohm @ 1.9A, 10V | 4V @ 250μA | 980pF @ 25V | 80nC @ 10V | 24ns | 29 ns | 20V | 4 V | 3.1A Tc | 1000V | 980pF | 10V | ±20V | 5 Ω | |||||||||||||||||||||||||||||||||||||||
SIHJ10N60E-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | E | Active | 1 (Unlimited) | ROHS3 Compliant | 8-PowerTDFN | 1.267mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 89W | 16 ns | 89W Tc | 10A | 150°C | 31 ns | N-Channel | 360m Ω @ 5A, 10V | 4.5V @ 250μA | 784pF @ 100V | 50nC @ 10V | 30V | 600V | 10A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SUP80090E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | 2016 | ThunderFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-220-3 | Unknown | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 5V | 375W Tc | 128A | SWITCHING | 0.011Ohm | 150V | SILICON | N-Channel | 9.4m Ω @ 30A, 10V | 5V @ 250μA | 3425pF @ 75V | 95nC @ 10V | 128A Tc | 150V | 240A | 180 mJ | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
SI5418DU-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3mm | ROHS3 Compliant | Lead Free | 8 | PowerPAK® ChipFET™ Single | Unknown | 750μm | 1.9mm | 14.5MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | NO LEAD | 260 | 40 | 8 | R-PDSO-N3 | 1 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.1W | 20 ns | 3V | 3.1W Ta 31W Tc | 12A | SWITCHING | 20 ns | SILICON | N-Channel | 14.5m Ω @ 7.7A, 10V | 3V @ 250μA | 1350pF @ 15V | 30nC @ 10V | 10ns | 10 ns | 20V | 30V | 12A Tc | 40A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
SI4100DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Power | 1 | Single | 2.5W | 10 ns | 2V | 2.5W Ta 6W Tc | 4.4A | SWITCHING | 0.063Ohm | 15 ns | SILICON | N-Channel | 63m Ω @ 4.4A, 10V | 4.5V @ 250μA | 600pF @ 50V | 20nC @ 10V | 12ns | 10 ns | 20V | 100V | 6.8A Tc | 6V 10V | ±20V | ||||||||||||||||||||||||||||||
SI4378DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Powers | 1 | Single | 85 ns | 1.8V | 1.6W Ta | 25A | SWITCHING | 0.0027Ohm | 140 ns | SILICON | N-Channel | 2.7m Ω @ 25A, 4.5V | 1.8V @ 250μA | 8500pF @ 10V | 55nC @ 4.5V | 65ns | 65 ns | 12V | 20V | 19A Ta | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||
SI3440DV-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | Tin | No | 6 | SOT-23-6 Thin, TSOT-23-6 | Unknown | 1mm | 1.65mm | 375mOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 6 | 1 | 1 | Single | 1.14W | 8 ns | 4V | 1.14W Ta | 1.5A | SWITCHING | 20 ns | SILICON | N-Channel | 375m Ω @ 1.5A, 10V | 4V @ 250μA | 8nC @ 10V | 10ns | 15 ns | 20V | 4 V | 1.2A Ta | 150V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
SI8806DB-T2-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 44 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | EAR99 | 840μm | ROHS3 Compliant | Lead Free | No | 4 | 4-XFBGA | No SVHC | 213μm | 840μm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) | 1 | Single | 900mW | 10 ns | 400mV | 500mW Ta | 3.9A | 30 ns | N-Channel | 43m Ω @ 1A, 4.5V | 1V @ 250μA | 17nC @ 8V | 20ns | 12 ns | 8V | 12V | 1.8V 4.5V | ±8V |
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