Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Number of Drivers | Frequency | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Supply Current | Operating Mode | Max Supply Current | Input Type | Bandwidth | Height Seated (Max) | Manufacturer Package Identifier | Current | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Terminal Pitch | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Power Supplies | Max Power Dissipation | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Number of Outputs | Output Current | Feature | Max Output Current | Analog IC - Other Type | Case Connection | Throw Configuration | Applications | Element Configuration | Power Dissipation | Propagation Delay | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Min Dual Supply Voltage | Drain to Source Resistance | Neg Supply Voltage-Nom (Vsup) | On-State Resistance (Max) | Supplier Device Package | -3db Bandwidth | Reverse Recovery Time | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Logic Function | Number of Inputs | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Channel Type | Supply Type | Voltage - Supply | Output Peak Current Limit-Nom | Switch-on Time-Max | Switch-off Time-Max | Switching | Normal Position | Off-state Isolation-Nom | On-state Resistance Match-Nom | Voltage - Supply, Single/Dual (±) | Signal Current-Max | High Side Driver | Rise / Fall Time (Typ) | Driven Configuration | Gate Type | Current - Peak Output (Source, Sink) | Logic Voltage - VIL, VIH | High Side Voltage - Max (Bootstrap) | Switch Circuit | Voltage - Supply, Single (V+) | Multiplexer/Demultiplexer Circuit |
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SI9912DY-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 5.5V | 4.5V | 2 | 1MHz | Surface Mount | -40°C~125°C TJ | 9mA | Non-Inverting | SI9912 | 830mW | 2 | 1A | 830mW | 30 ns | 30 ns | 8-SOIC | Synchronous | 4.5V~5.5V | 30ns 20ns | Half-Bridge | N-Channel MOSFET | 1A 1A | 30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI9976DY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2005 | Obsolete | 1 (Unlimited) | 14 | EAR99 | 8.65mm | ROHS3 Compliant | No | 14 | 14-SOIC (0.154, 3.90mm Width) | No SVHC | 2 | 3.9mm | Surface Mount | -40°C~125°C TJ | 10μA | 10μA | Non-Inverting | 1.75mm | 1 | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | SI9976 | 14 | 1W | 500mA | 500mA | 1W | 500 ns | 500 ns | 110ns | 50 ns | Synchronous | 4.5V~16.5V | 0.5A | YES | 110ns 50ns | Half-Bridge | N-Channel MOSFET | 500mA 500mA | 1V 4V | 40V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG2592DN1-T1-GE4 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Tape & Reel (TR) | 2017 | Active | 1 (Unlimited) | ROHS3 Compliant | 10-UFQFN | unknown | Surface Mount | -40°C~85°C TA | NOT SPECIFIED | NOT SPECIFIED | 1 | Audio | 1.6V~5.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG535DJ-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | yes | Obsolete | 1 (Unlimited) | 28 | 15V | 39.7mm | ROHS3 Compliant | Lead Free | No | 28 | 28-DIP (0.600, 15.24mm) | 16.5V | 10V | 3.31mm | 14.73mm | 90Ohm | Through Hole | 4.190003g | -40°C~85°C TA | CMOS | 5μA | 50μA | 500MHz | 1 | 5μA | e3 | Matte Tin (Sn) | DUAL | 15V | DG535 | 28 | 2.54mm | 1 | 625mW | T-Switch Configuration | Video | 625mW | 300 ns | 300 ns | 90Ohm | 150 ns | Multiplexer | 16 | Single | BREAK-BEFORE-MAKE | 9Ohm | 0.02A | 10V~16.5V | 16:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG534ADJ-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2009 | yes | Obsolete | 1 (Unlimited) | 20 | 26.92mm | ROHS3 Compliant | 20 | 20-DIP (0.300, 7.62mm) | 18V | unknown | 10V | 3.81mm | 7.11mm | 90Ohm | Through Hole | 2.259996g | -40°C~85°C TA | CMOS | 600μA | 2mA | 500MHz | 1 | 600μA | e3 | Matte Tin (Sn) | NOT SPECIFIED | 15V | NOT SPECIFIED | DG534 | 20 | 2 | Not Qualified | 515-3V | 625mW | T-Switch Configuration | Ultrasound, Video | 625mW | 300 ns | 300 ns | 15V | 10V | -3V | 90Ohm | 175 ns | Multiplexer | 4 | 12V | Dual, Single | 500ns | BREAK-BEFORE-MAKE | 9Ohm | SPDT | 10V~21V | 2:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG535DJ | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2009 | no | Obsolete | 1 (Unlimited) | 28 | 15V | 39.7mm | Non-RoHS Compliant | No | 28 | 28-DIP (0.600, 15.24mm) | 16.5V | 10V | 3.31mm | 14.73mm | 90Ohm | Through Hole | 4.190003g | -40°C~85°C TA | 5μA | 50μA | 500MHz | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | 15V | 28 | 2.54mm | 1 | 625mW | T-Switch Configuration | Video | 300 ns | 300 ns | 90Ohm | 150 ns | Multiplexer | Single | BREAK-BEFORE-MAKE | 0.02A | 10V~16.5V | 16:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG540DN | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2005 | Obsolete | 1 (Unlimited) | 85°C | 0°C | 15V | 9.04mm | Non-RoHS Compliant | No | 20 | 20-LCC (J-Lead) | 18V | 10V | 3.69mm | 9.04mm | 60Ohm | Surface Mount | 722.005655mg | -40°C~85°C TA | 3.5mA | 6mA | 500MHz | 4 | 800mW | 4 | RGB, T-Switch Configuration | SPST | Video | 800mW | 70 ns | 15V | 10V | 60Ohm | 20-PLCC (9x9) | 500MHz | 50 ns | 4 | Dual, Single | 3V~15V ±3V~15V | SPST | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG542AP | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2016 | Obsolete | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | No | 16 | 16-DIP (0.300, 7.62mm) | 18V | 10V | 500MHz | 60Ohm | Through Hole | -55°C~125°C TA | 6mA | 3.5mA | 4 | 900mW | RGB, T-Switch Configuration | SPST | Video | 100 ns | 15V | 10V | 60Ohm | 60Ohm | 16-DIP Side Brazed | 500MHz | 60 ns | Dual, Single | 3V~15V ±3V~15V | SPST | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG884DN-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2009 | yes | Obsolete | 1 (Unlimited) | 44 | 15V | ROHS3 Compliant | Lead Free | No | 44 | 8 X 4 ARRAY | 44-LCC (J-Lead) | 90Ohm | Surface Mount | 2.386605g | -40°C~85°C TA | NMOS | 1.5mA | 300MHz | 4.57mm | 1 | e3 | Matte Tin (Sn) | QUAD | J BEND | 260 | 15V | 30 | DG884 | 44 | 1 | Multiplexer or Switches | T-Switch Configuration | CROSS POINT SWITCH | Video | 20V | 90Ohm | -3V | 90Ohm | Dual, Single | 300ns | BREAK-BEFORE-MAKE | 3Ohm | 13V~20V | 8:4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG541DJ-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2016 | yes | Obsolete | 1 (Unlimited) | 16 | Through Hole | 15V | 21.33mm | ROHS3 Compliant | 16 | 16-DIP (0.300, 7.62mm) | 18V | unknown | 10V | 3.81mm | 7.11mm | 60Ohm | Through Hole | 1.627801g | -40°C~85°C TA | CMOS | 3.5mA | 6mA | 500MHz | 4 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 15V | NOT SPECIFIED | DG541 | 16 | 1 | Multiplexer or Switches | Not Qualified | 15-3V | 470mW | 4 | RGB, T-Switch Configuration | Video | 470mW | 70 ns | 15V | 10V | -3V | 60Ohm | 50 ns | Dual, Single | 130ns | 85ns | BREAK-BEFORE-MAKE | NO | 60 dB | 2Ohm | 3V~15V ±3V~15V | SPST | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG536DN | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2008 | no | Obsolete | 1 (Unlimited) | 44 | 15V | 16.66mm | Non-RoHS Compliant | No | 44 | 44-LCC (J-Lead) | 16.5V | 10V | 3.69mm | 16.66mm | 90Ohm | Surface Mount | 2.386605g | -40°C~85°C TA | 5μA | 50μA | 500MHz | 1 | e0 | Tin/Lead (Sn/Pb) | QUAD | J BEND | 15V | 44 | 1 | 450mW | T-Switch Configuration | Video | 450mW | 300 ns | 300 ns | 90Ohm | 150 ns | Multiplexer | 16 | Single | BREAK-BEFORE-MAKE | 0.02A | 10V~16.5V | 16:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SUM45N25-58-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 58mOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 260 | 30 | 4 | R-PSSO-G2 | 1 | FET General Purpose Power | Not Qualified | 1 | Single | 3.75W | 22 ns | 3.75W Ta 375W Tc | 45A | SWITCHING | 40 ns | SILICON | N-Channel | 58m Ω @ 20A, 10V | 4V @ 250μA | 5000pF @ 25V | 140nC @ 10V | 220ns | 145 ns | 30V | 250V | 4 V | 45A Tc | 90A | 6V 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SUM110P04-04L-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount, Through Hole | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | 4.2MOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 4 | R-PSSO-G2 | 1 | Other Transistors | 1 | Single | 3.75W | 25 ns | 3.75W Ta 375W Tc | 110A | SWITCHING | 190 ns | SILICON | P-Channel | 4.2m Ω @ 30A, 10V | 3V @ 250μA | 11200pF @ 25V | 350nC @ 10V | 30ns | 110 ns | 20V | -40V | 110A Tc | 40V | 240A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHG20N50C-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2017 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-247-3 | Unknown | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | 260 | 40 | 3 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AC | 292W | 80 ns | 5V | 250W Tc | 20A | SWITCHING | 0.27Ohm | 32 ns | SILICON | N-Channel | 270m Ω @ 10A, 10V | 5V @ 250μA | 2942pF @ 25V | 76nC @ 10V | 27ns | 44 ns | 30V | 500V | 5 V | 20A Tc | 80A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHB33N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Bulk | 2013 | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | FET General Purpose Powers | 1 | Single | 56 ns | 2V | 278W Tc | 33A | SWITCHING | 0.099Ohm | 600V | 150 ns | SILICON | N-Channel | 99m Ω @ 16.5A, 10V | 4V @ 250μA | 3508pF @ 100V | 150nC @ 10V | 90ns | 80 ns | 20V | 33A Tc | 600V | 88A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP460PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2002 | Active | 1 (Unlimited) | 150°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | 20A | No | 3 | TO-247-3 | Unknown | 20.7mm | 5.31mm | 270MOhm | Through Hole | 38.000013g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | 1 | 1 | Single | 280W | 18 ns | 4V | 270mOhm | TO-247-3 | 280W Tc | 860 ns | 20A | 110 ns | N-Channel | 270mOhm @ 12A, 10V | 4V @ 250μA | 4200pF @ 25V | 210nC @ 10V | 59ns | 58 ns | 20V | 500V | 4 V | 20A Tc | 500V | 4.2nF | 10V | ±20V | 270 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIA906EDJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 2.05mm | ROHS3 Compliant | Lead Free | Tin | 6 | PowerPAK® SC-70-6 Dual | unknown | 850μm | 2.05mm | 46mOhm | Surface Mount | 28.009329mg | -55°C~150°C TJ | ENHANCEMENT MODE | C-07431-DUAL | e3 | NO LEAD | 260 | 40 | 6 | FET General Purpose Power | Not Qualified | 7.8W | 2 | DRAIN | Dual | 1.9W | 5 ns | 4.5A | 150°C | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 15 ns | SILICON | 2 N-Channel (Dual) | 46m Ω @ 3.9A, 4.5V | 1.4V @ 250μA | 350pF @ 10V | 12nC @ 10V | 12ns | 12 ns | 12V | 20V | Logic Level Gate | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7288DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 Dual | Unknown | 19mOhm | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | PowerPAKSO-8 | e3 | C BEND | 260 | 40 | SI7288 | 8 | R-XDSO-C6 | 2 | FET General Purpose Powers | 15.6W | 2 | DRAIN | Dual | 3.6W | 12 ns | 2.8V | 20A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 16 ns | SILICON | 2 N-Channel (Dual) | 19m Ω @ 10A, 10V | 2.8V @ 250μA | 565pF @ 20V | 15nC @ 10V | 14ns | 10 ns | 20V | 40V | Standard | 1.2 V | 10A | 40V | 50A | 5 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SUM110N10-09-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2011 | TrenchFET® | yes | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 9.5MOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | GULL WING | 260 | 30 | 4 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 3.75W | 20 ns | 4V | 70 ns | 3.75W Ta 375W Tc | 110A | SWITCHING | 55 ns | SILICON | N-Channel | 9.5m Ω @ 30A, 10V | 4V @ 250μA | 6700pF @ 25V | 160nC @ 10V | 125ns | 130 ns | 20V | 100V | 100V | 4 V | 110A Tc | 440A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SUP53P06-20-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2009 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 9.01mm | 4.7mm | 19.5MOhm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | 1 | Other Transistors | TO-220AB | Single | 3.1W | 10 ns | -1V | 3.1W Ta 104.2W Tc | 9.2A | 70 ns | P-Channel | 19.5m Ω @ 30A, 10V | 3V @ 250μA | 3500pF @ 25V | 115nC @ 10V | 7ns | 40 ns | 20V | -60V | 9.2A Ta 53A Tc | 60V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2318DS-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.12mm | 1.4mm | 45mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Power | 1 | Single | 750mW | 5 ns | 3V | 750mW Ta | 3.9A | 150°C | SWITCHING | 20 ns | SILICON | N-Channel | 45m Ω @ 3.9A, 10V | 3V @ 250μA | 540pF @ 20V | 15nC @ 10V | 12ns | 12 ns | 20V | 40V | 3 V | 3A | 3A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2309CDS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.02mm | 1.4mm | 345mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 12A | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 60V | 1 | Single | 1.7W | 40 ns | -1V | 1W Ta 1.7W Tc | 1.2A | SWITCHING | 15 ns | SILICON | P-Channel | 345m Ω @ 1.25A, 10V | 3V @ 250μA | 210pF @ 30V | 4.1nC @ 4.5V | 35ns | 35 ns | 20V | -60V | 1.6A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7997DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | 8 | PowerPAK® SO-8 Dual | No SVHC | unknown | 1.12mm | 5.5mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | C BEND | 260 | 40 | SI7997 | 8 | R-XDSO-C5 | Other Transistors | Not Qualified | 46W | 2 | DRAIN | Dual | 3.5W | 15 ns | -2.2V | -20.8A | 150°C | METAL-OXIDE SEMICONDUCTOR | 115 ns | SILICON | 2 P-Channel (Dual) | 5.5m Ω @ 20A, 10V | 2.2V @ 250μA | 6200pF @ 15V | 160nC @ 10V | 40 ns | 20V | -30V | Standard | 60A | 60A | 30V | 100A | 45 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFL9014TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 6.7mm | ROHS3 Compliant | Lead Free | No | 4 | AVALANCHE RATED | TO-261-4, TO-261AA | Unknown | 1.8mm | 3.7mm | 500mOhm | Surface Mount | 250.212891mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 40 | 4 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2W | 11 ns | -2V | 2W Ta 3.1W Tc | -1.8A | 150°C | SWITCHING | 9.6 ns | SILICON | P-Channel | 500m Ω @ 1.1A, 10V | 4V @ 250μA | 270pF @ 25V | 12nC @ 10V | 63ns | 31 ns | 20V | -60V | 1.8A Tc | 60V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFL9110TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Active | 1 (Unlimited) | 150°C | -55°C | 6.7mm | ROHS3 Compliant | Lead Free | No | 4 | TO-261-4, TO-261AA | Unknown | 1.8mm | 3.7mm | 1.2Ohm | Surface Mount | 250.212891mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | 2W | 10 ns | -4V | 1.2Ohm | SOT-223 | 2W Ta 3.1W Tc | -1.1A | 150°C | 15 ns | P-Channel | 1.2Ohm @ 660mA, 10V | 4V @ 250μA | 200pF @ 25V | 8.7nC @ 10V | 27ns | 17 ns | 20V | -100V | 1.1A Tc | 100V | 200pF | 10V | ±20V | 1.2 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7461DP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.17mm | 5.89mm | 14.5mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | S17-0173-Single | e3 | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | Other Transistors | 1 | DRAIN | Single | 1.9W | 20 ns | -3V | 1.9W Ta | -12.6A | 150°C | SWITCHING | 205 ns | SILICON | P-Channel | 14.5m Ω @ 14.4A, 10V | 3V @ 250μA | 190nC @ 10V | 20ns | 20 ns | 20V | -60V | -3 V | 8.6A Ta | 60V | 60A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7116DN-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.05mm | 7.8mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 1.5W | 10 ns | 2.5V | 1.5W Ta | 16.4A | SWITCHING | 40V | 36 ns | SILICON | N-Channel | 7.8m Ω @ 16.4A, 10V | 2.5V @ 250μA | 23nC @ 4.5V | 15ns | 15 ns | 20V | 10.5A Ta | 40V | 60A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF510PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 175°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | Tin | 5.6A | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 540mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | 1 | 1 | Single | 43W | 6.9 ns | 4V | 540mOhm | TO-220AB | 43W Tc | 200 ns | 5.6A | 15 ns | N-Channel | 540mOhm @ 3.4A, 10V | 4V @ 250μA | 180pF @ 25V | 8.3nC @ 10V | 16ns | 9.4 ns | 20V | 100V | 4 V | 5.6A Tc | 100V | 180pF | 10V | ±20V | 540 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7137DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 6.15mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.12mm | 5.15mm | 1.95mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 6.25W | 100 ns | -1.4V | 6.25W Ta 104W Tc | -60A | 150°C | SWITCHING | 230 ns | SILICON | P-Channel | 1.95m Ω @ 25A, 10V | 1.4V @ 250μA | 20000pF @ 10V | 585nC @ 10V | 150ns | 110 ns | 12V | -20V | -1.4 V | 42A | 60A Tc | 20V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQM120P06-07L_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2015 | TrenchFET® | Active | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 5.08mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 375W | 15 ns | 5.6mOhm | TO-263 (D2Pak) | 375W Tc | -120A | 175°C | 97 ns | P-Channel | 6.7mOhm @ 30A, 10V | 2.5V @ 250μA | 14280pF @ 25V | 270nC @ 10V | 20V | -60V | 120A Tc | 60V | 4.5V 10V | ±20V |
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