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  • APT75GP120J

APT75GP120J

Trans IGBT Chip N-CH 1.2KV 128A 4-Pin SOT-227


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT75GP120J
  • Package: ISOTOP
  • Datasheet: PDF
  • Stock: 685
  • Description: Trans IGBT Chip N-CH 1.2KV 128A 4-Pin SOT-227 (Kg)

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Details

Tags

Parameters
Input Standard
Turn-Off Delay Time 163 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 128A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.3V
Input Capacitance 7.04nF
Turn On Time 60 ns
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 75A
Turn Off Time-Nom (toff) 359 ns
IGBT Type PT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 7.04nF @ 25V
Height 9.6mm
Length 38.2mm
Width 25.4mm
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 23 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case ISOTOP
Number of Pins 4
Weight 30.000004g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 1999
Series POWER MOS 7®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature ULTRA FAST, LOW CONDUCTION LOSS
Voltage - Rated DC 1.2kV
Max Power Dissipation 543W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 128A
Pin Count 4
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Turn On Delay Time 20 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
See Relate Datesheet