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APTGF50H60T2G

POWER MOD IGBT NPT FULL BRDG SP2


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGF50H60T2G
  • Package: SP3
  • Datasheet: PDF
  • Stock: 424
  • Description: POWER MOD IGBT NPT FULL BRDG SP2 (Kg)

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Means of Payment

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 22
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Number of Elements 1
Configuration Full Bridge Inverter
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 65A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 2.2nF
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 50A
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2.2nF @ 25V
VCEsat-Max 2.45 V
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet