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APTGF50VDA120T3G

POWER MOD IGBT NPT DL BOOST SP3


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGF50VDA120T3G
  • Package: SP3
  • Datasheet: PDF
  • Stock: 869
  • Description: POWER MOD IGBT NPT DL BOOST SP3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Chassis Mount, Screw, Through Hole
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 3
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 20
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 312W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X20
Qualification Status Not Qualified
Number of Elements 2
Configuration Dual Boost Chopper
Element Configuration Dual
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 70A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.2V
Input Capacitance 3.45nF
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 50A
Turn Off Time-Nom (toff) 400 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.45nF @ 25V
Height 11.5mm
Length 73.4mm
Width 40.8mm
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet