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  • AUIRLR3705Z

AUIRLR3705Z

MOSFET N-CH 55V 42A DPAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRLR3705Z
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 459
  • Description: MOSFET N-CH 55V 42A DPAK (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Number of Terminations 2
ECCN Code EAR99
Resistance 8Ohm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 130W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 130W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 42A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 66nC @ 5V
Factory Lead Time 13 Weeks
Rise Time 150ns
Contact Plating Tin
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Mount Surface Mount
Vgs (Max) ±16V
Fall Time (Typ) 70 ns
Mounting Type Surface Mount
Turn-Off Delay Time 33 ns
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Continuous Drain Current (ID) 42A
Number of Pins 3
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 89A
Transistor Element Material SILICON
Drain to Source Breakdown Voltage 55V
Operating Temperature -55°C~175°C TJ
Height 2.39mm
Length 6.73mm
Packaging Tube
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
Published 2004
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
See Relate Datesheet