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  • BSP297H6327XTSA1

BSP297H6327XTSA1

BSP297H6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSP297H6327XTSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 644
  • Description: BSP297H6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2008
Series SIPMOS®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Voltage 200V
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Current 66A
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 5.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.8 Ω @ 660mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 400μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 357pF @ 25V
Current - Continuous Drain (Id) @ 25°C 660mA Ta
Gate Charge (Qg) (Max) @ Vgs 16.1nC @ 10V
Rise Time 3.8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 49 ns
Continuous Drain Current (ID) 600mA
Threshold Voltage 1.4V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Nominal Vgs 1.4 V
Height 1.6mm
Length 6.5mm
Width 6.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet