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BSP88E6327

N-CHANNEL POWER MOSFET


  • Manufacturer: Rochester Electronics, LLC
  • Origchip NO: 699-BSP88E6327
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 132
  • Description: N-CHANNEL POWER MOSFET (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SIPMOS®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish MATTE TIN
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.7W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6 Ω @ 350mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 108μA
Input Capacitance (Ciss) (Max) @ Vds 95pF @ 25V
Current - Continuous Drain (Id) @ 25°C 350mA Ta
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V
Drain to Source Voltage (Vdss) 240V
Drive Voltage (Max Rds On,Min Rds On) 2.8V 4.5V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.35A
Drain-source On Resistance-Max 6Ohm
Pulsed Drain Current-Max (IDM) 1.4A
DS Breakdown Voltage-Min 240V
RoHS Status Non-RoHS Compliant
See Relate Datesheet