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  • BSZ100N06NSATMA1

BSZ100N06NSATMA1

BSZ100N06NSATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSZ100N06NSATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 117
  • Description: BSZ100N06NSATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Supplier Device Package PG-TSDSON-8-FL
Lead Free Contains Lead
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.1W Ta 36W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.3V @ 14μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1075pF @ 30V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 2ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Factory Lead Time 18 Weeks
Continuous Drain Current (ID) 40A
Contact Plating Tin
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Mount Surface Mount
Mounting Type Surface Mount
Input Capacitance 1.075nF
Package / Case 8-PowerTDFN
Drain to Source Resistance 8.5mOhm
Rds On Max 10 mΩ
Number of Pins 8
See Relate Datesheet