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DDB2U50N08W1RB23BOMA2

IGBT MOD DIODE BRIDGE EASY1B-2-1


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-DDB2U50N08W1RB23BOMA2
  • Package: Module
  • Datasheet: PDF
  • Stock: 776
  • Description: IGBT MOD DIODE BRIDGE EASY1B-2-1 (Kg)

Purchase & Inquiry

Transport

Purchase

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X9
Number of Elements 1
Configuration 2 Independent
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Input Standard
Drain Current-Max (Abs) (ID) 60A
Drain-source On Resistance-Max 0.2Ohm
Pulsed Drain Current-Max (IDM) 100A
DS Breakdown Voltage-Min 600V
FET Technology METAL-OXIDE SEMICONDUCTOR
NTC Thermistor No
Input Capacitance (Cies) @ Vce 14nF @ 25V
RoHS Status ROHS3 Compliant
See Relate Datesheet