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FJP2160DTU

FJP2160DTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FJP2160DTU
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 923
  • Description: FJP2160DTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Transistor Type NPN
Collector Emitter Voltage (VCEO) 800V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 400mA 3V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 750mV @ 330mA, 1A
Collector Emitter Breakdown Voltage 800V
Gate to Source Voltage (Vgs) 20V
Transition Frequency 25MHz
Frequency - Transition 5MHz
Collector Base Voltage (VCBO) 1.6kV
Emitter Base Voltage (VEBO) 12V
hFE Min 20
Height 15.95mm
Length 9.9mm
Width 4.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~125°C TJ
Packaging Tube
Published 2012
Series ESBC™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Other Transistors
Max Power Dissipation 100W
Terminal Position SINGLE
Number of Elements 1
Configuration SINGLE WITH BUILT-IN FET AND DIODE
Power - Max 100W
Transistor Application SWITCHING
Polarity/Channel Type NPN
See Relate Datesheet