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IPD65R420CFDATMA1

Trans MOSFET N-CH 650V 8.7A 3-Pin TO-252 T/R


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD65R420CFDATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 414
  • Description: Trans MOSFET N-CH 650V 8.7A 3-Pin TO-252 T/R (Kg)

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Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 83.3W Tc
Power Dissipation 83.3W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 420mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 300μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 100V
Current - Continuous Drain (Id) @ 25°C 8.7A Tc
Gate Charge (Qg) (Max) @ Vgs 31.5nC @ 10V
Rise Time 7ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 8.7A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Input Capacitance 870pF
Rds On Max 420 mΩ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™
Part Status Active
See Relate Datesheet