English

All Products

View All >>
  • IRF6711STRPBF

IRF6711STRPBF

MOSFET N-CH 25V 19A DIRECTFET-SQ


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF6711STRPBF
  • Package: DirectFET™ Isometric SQ
  • Datasheet: PDF
  • Stock: 562
  • Description: MOSFET N-CH 25V 19A DIRECTFET-SQ (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric SQ
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Ta 42W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 7.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1810pF @ 13V
Current - Continuous Drain (Id) @ 25°C 19A Ta 84A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 13ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.4 ns
Turn-Off Delay Time 7.1 ns
Continuous Drain Current (ID) 19A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 84A
Drain-source On Resistance-Max 0.0038Ohm
Drain to Source Breakdown Voltage 25V
Avalanche Energy Rating (Eas) 62 mJ
Height 506μm
Length 4.826mm
Width 3.95mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet