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  • IRF7807D1PBF

IRF7807D1PBF

IRF7807D1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF7807D1PBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 434
  • Description: IRF7807D1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
RoHS Status RoHS Compliant
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Lead Free Lead Free
Packaging Tube
Published 2004
Series FETKY™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
ECCN Code EAR99
Resistance 25MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 8.3A
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Forward Current 3.5A
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.3A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±12V
Forward Voltage 500mV
Continuous Drain Current (ID) 8.3A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
FET Feature Schottky Diode (Isolated)
Nominal Vgs 1 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
Mount Surface Mount
REACH SVHC No SVHC
Mounting Type Surface Mount
See Relate Datesheet