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  • IRF820PBF

IRF820PBF

IRF820PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRF820PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 629
  • Description: IRF820PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 2.5A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 50W Tc
Element Configuration Single
Power Dissipation 50W
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 8.6ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 2.5A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Input Capacitance 360pF
Recovery Time 520 ns
Drain to Source Resistance 3Ohm
Rds On Max 3 Ω
Nominal Vgs 4 V
Height 9.01mm
Length 10.41mm
Width 4.7mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet