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  • IRF840BPBF

IRF840BPBF

MOSFET 500V 850mOhm@10V 8.7A N-Ch D-SRS


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRF840BPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 385
  • Description: MOSFET 500V 850mOhm@10V 8.7A N-Ch D-SRS (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN OVER NICKEL
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 156W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 850m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 527pF @ 100V
Current - Continuous Drain (Id) @ 25°C 8.7A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 8.7A
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.85Ohm
Drain to Source Breakdown Voltage 500V
Avalanche Energy Rating (Eas) 29 mJ
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 8 Weeks
See Relate Datesheet