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  • IRFD9014PBF

IRFD9014PBF

Trans MOSFET P-CH 60V 1.1A 4-Pin HVMDIP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFD9014PBF
  • Package: 4-DIP (0.300, 7.62mm)
  • Datasheet: PDF
  • Stock: 320
  • Description: Trans MOSFET P-CH 60V 1.1A 4-Pin HVMDIP (Kg)

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Details

Tags

Parameters
Radiation Hardening No
Max Operating Temperature 175°C
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Lead Pitch 2.54mm
Number of Elements 1
Row Spacing 7.62 mm
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Power Dissipation 1.3W
Turn On Delay Time 11 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 500mOhm @ 660mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.1A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 63ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 63 ns
Turn-Off Delay Time 10 ns
Factory Lead Time 8 Weeks
Continuous Drain Current (ID) 1.1A
Mount Through Hole
Threshold Voltage -4V
Mounting Type Through Hole
Gate to Source Voltage (Vgs) 20V
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage -60V
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Input Capacitance 270pF
Drain to Source Resistance 500mOhm
Operating Temperature -55°C~175°C TJ
Packaging Tube
Rds On Max 500 mΩ
Published 2005
Nominal Vgs -4 V
Height 3.3782mm
Part Status Active
Length 6.2738mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Width 5.0038mm
Resistance 500mOhm
See Relate Datesheet