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  • IRFH5304TRPBF

IRFH5304TRPBF

MOSFET N-CH 30V 22A 8VQFN


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFH5304TRPBF
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 616
  • Description: MOSFET N-CH 30V 22A 8VQFN (Kg)

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Details

Tags

Parameters
ECCN Code EAR99
Resistance 4.5MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.6W Ta 46W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 47A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2360pF @ 10V
Current - Continuous Drain (Id) @ 25°C 22A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.6 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 79A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 22A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 320A
Avalanche Energy Rating (Eas) 46 mJ
Nominal Vgs 2.35 V
Height 838.2μm
Length 5.9944mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
See Relate Datesheet