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  • IRFR9220TRPBF

IRFR9220TRPBF

IRFR9220TRPBF P-channel MOSFET Transistor; 3.6 A; 200 V; 3-Pin TO-252


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFR9220TRPBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 172
  • Description: IRFR9220TRPBF P-channel MOSFET Transistor; 3.6 A; 200 V; 3-Pin TO-252 (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.5Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 42W Tc
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 8.8 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 7.3 ns
Continuous Drain Current (ID) 3.6A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -200V
Input Capacitance 340pF
Drain to Source Resistance 1.5Ohm
Rds On Max 1.5 Ω
Nominal Vgs -2 V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet