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IRLZ24PBF

MOSFET N-CH 60V 17A TO-220AB


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRLZ24PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 966
  • Description: MOSFET N-CH 60V 17A TO-220AB (Kg)

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Details

Tags

Parameters
Rise Time 110ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 17A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 10V
Pulsed Drain Current-Max (IDM) 68A
DS Breakdown Voltage-Min 60V
Nominal Vgs 2 V
Height 9.01mm
Length 10.41mm
Width 4.7mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 100mOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 60W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 10A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
See Relate Datesheet