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MKI100-12E8

IXYS MKI100-12E8, E 3 Bridge IGBT Module, 165 A max, 1200 V, Screw Mount


  • Manufacturer: IXYS
  • Origchip NO: 401-MKI100-12E8
  • Package: E3
  • Datasheet: PDF
  • Stock: 426
  • Description: IXYS MKI100-12E8, E 3 Bridge IGBT Module, 165 A max, 1200 V, Screw Mount (Kg)

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Details

Tags

Parameters
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case E3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Packaging Box
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 640W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number MKI
Pin Count 14
JESD-30 Code R-XUFM-X8
Number of Elements 4
Configuration Full Bridge Inverter
Case Connection ISOLATED
Power - Max 640W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 165A
Current - Collector Cutoff (Max) 1.4mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 7.4nF
Turn On Time 345 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 100A
Turn Off Time-Nom (toff) 795 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 7.4nF @ 25V
VCEsat-Max 2.5 V
Height 17mm
Length 122mm
Width 62mm
RoHS Status RoHS Compliant
See Relate Datesheet