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  • MVGSF1N02LT1G

MVGSF1N02LT1G

MOSFET


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MVGSF1N02LT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 294
  • Description: MOSFET (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 5V
Current - Continuous Drain (Id) @ 25°C 750mA Ta
Rise Time 1ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 750mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.75A
Drain to Source Breakdown Voltage 20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 30 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Pin Count 3
Power Dissipation-Max 400mW Ta
Element Configuration Single
Power Dissipation 400mW
Turn On Delay Time 2.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 90m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
See Relate Datesheet