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NJVMJD122T4G-VF01

NJVMJD122T4G-VF01 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NJVMJD122T4G-VF01
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 201
  • Description: NJVMJD122T4G-VF01 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MJD122
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Polarity NPN
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Case Connection COLLECTOR
Power - Max 1.75W
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A 4V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 4V @ 8A, 80mA
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 8A
RoHS Status ROHS3 Compliant
See Relate Datesheet