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  • NTD6415ANLT4G

NTD6415ANLT4G

NTD6415ANLT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD6415ANLT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 505
  • Description: NTD6415ANLT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 34 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PDSO-G2
Number of Elements 1
Power Dissipation-Max 83W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 83W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1024pF @ 25V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 91ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 71 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.056Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 79 mJ
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet