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  • NTE4151PT1G

NTE4151PT1G

NTE4151PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTE4151PT1G
  • Package: SC-89, SOT-490
  • Datasheet: PDF
  • Stock: 207
  • Description: NTE4151PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Pin Count 3
Number of Elements 1
Power Dissipation-Max 313mW Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 313mW
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 156pF @ 5V
Current - Continuous Drain (Id) @ 25°C 760mA Tj
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V
Rise Time 8.2ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±6V
Factory Lead Time 8 Weeks
Fall Time (Typ) 8.2 ns
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 760mA
Package / Case SC-89, SOT-490
Gate to Source Voltage (Vgs) 6V
Surface Mount YES
Number of Pins 3
Drain Current-Max (Abs) (ID) 0.76A
Transistor Element Material SILICON
Drain to Source Breakdown Voltage -20V
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Height 800μm
Pbfree Code yes
Part Status Active
Length 1.6764mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Width 950μm
Resistance 260mOhm
Radiation Hardening No
Terminal Finish Tin (Sn)
Subcategory Other Transistors
RoHS Status ROHS3 Compliant
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Lead Free Lead Free
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -760mA
Time@Peak Reflow Temperature-Max (s) 40
See Relate Datesheet