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NTHD4N02FT1G

MOSFET 20V 3.9A N-Channel w/3.7A Schottky


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTHD4N02FT1G
  • Package: 8-SMD, Flat Lead
  • Datasheet: PDF
  • Stock: 693
  • Description: MOSFET 20V 3.9A N-Channel w/3.7A Schottky (Kg)

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Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 11 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating 2.7A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 910mW Tj
Operating Mode ENHANCEMENT MODE
Power Dissipation 910mW
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.9A Tj
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 3.9A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 2.9A
Drain to Source Breakdown Voltage 20V
FET Feature Schottky Diode (Isolated)
Feedback Cap-Max (Crss) 50 pF
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet