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  • PHB27NQ10T,118

PHB27NQ10T,118

MOSFET N-CH 100V 28A D2PAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PHB27NQ10T,118
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 872
  • Description: MOSFET N-CH 100V 28A D2PAK (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 28A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 43ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
Input Capacitance 1.24nF
Drain to Source Resistance 50mOhm
Rds On Max 50 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series TrenchMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 107W Tc
Power Dissipation 107W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 50mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 25V
See Relate Datesheet