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  • PSMN022-30PL,127

PSMN022-30PL,127

NEXPERIA - PSMN022-30PL,127 - MOSFET, N CHANNEL, 30V, 30A, 3-TO-220AB


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN022-30PL,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 533
  • Description: NEXPERIA - PSMN022-30PL,127 - MOSFET, N CHANNEL, 30V, 30A, 3-TO-220AB (Kg)

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Details

Tags

Parameters
FET Type N-Channel
Rds On (Max) @ Id, Vgs 22mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 447pF @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Rise Time 29ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
Input Capacitance 447pF
Drain to Source Resistance 22mOhm
Rds On Max 22 mΩ
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 453.59237mg
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 22MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 41W Tc
Element Configuration Single
Power Dissipation 41W
Turn On Delay Time 12 ns
See Relate Datesheet