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  • PSMN057-200P,127

PSMN057-200P,127

Single N-Channel 200 V 165 mOhm 96 nC 250 W Silicon Flange Mount Mosfet TO-220-3


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN057-200P,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 568
  • Description: Single N-Channel 200 V 165 mOhm 96 nC 250 W Silicon Flange Mount Mosfet TO-220-3 (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 57m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3750pF @ 25V
Current - Continuous Drain (Id) @ 25°C 39A Tc
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
Rise Time 58ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 78 ns
Turn-Off Delay Time 105 ns
Continuous Drain Current (ID) 39A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
Drain-source On Resistance-Max 0.057Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 156A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet