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  • SI2318DS-T1-E3

SI2318DS-T1-E3

Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 T/R


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2318DS-T1-E3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 942
  • Description: Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 T/R (Kg)

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Details

Tags

Parameters
JESD-609 Code e3
Pbfree Code yes
Fall Time (Typ) 12 ns
Part Status Active
Turn-Off Delay Time 20 ns
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Continuous Drain Current (ID) 3.9A
Resistance 45mOhm
Threshold Voltage 3V
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Gate to Source Voltage (Vgs) 20V
Terminal Form GULL WING
Drain Current-Max (Abs) (ID) 3A
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Drain to Source Breakdown Voltage 40V
Pin Count 3
Number of Elements 1
Max Junction Temperature (Tj) 150°C
Number of Channels 1
Nominal Vgs 3 V
Power Dissipation-Max 750mW Ta
Element Configuration Single
Height 1.12mm
Operating Mode ENHANCEMENT MODE
Length 3.04mm
Power Dissipation 750mW
Turn On Delay Time 5 ns
Width 1.4mm
FET Type N-Channel
Radiation Hardening No
REACH SVHC Unknown
Transistor Application SWITCHING
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Rds On (Max) @ Id, Vgs 45m Ω @ 3.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 20V
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Current - Continuous Drain (Id) @ 25°C 3A Ta
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Rise Time 12ns
Operating Temperature -55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
Vgs (Max) ±20V
See Relate Datesheet