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  • SI4186DY-T1-GE3

SI4186DY-T1-GE3

MOSFET N-CH 20V 35.8A 8SOIC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4186DY-T1-GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 378
  • Description: MOSFET N-CH 20V 35.8A 8SOIC (Kg)

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Details

Tags

Parameters
Number of Pins 8
Weight 540.001716mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3W Ta 6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Turn On Delay Time 29 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3630pF @ 10V
Current - Continuous Drain (Id) @ 25°C 35.8A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 35.8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 25.3A
Drain-source On Resistance-Max 0.0026Ohm
Drain to Source Breakdown Voltage 20V
Nominal Vgs 2.4 V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
See Relate Datesheet