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  • SI4946BEY-T1-E3

SI4946BEY-T1-E3

MOSFET 2N-CH 60V 6.5A 8-SOIC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4946BEY-T1-E3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 854
  • Description: MOSFET 2N-CH 60V 6.5A 8-SOIC (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 41mOhm
Terminal Finish MATTE TIN
Max Power Dissipation 2.4W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI4946
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Turn On Delay Time 10 ns
Power - Max 3.7W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 41m Ω @ 5.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 6.5A
Threshold Voltage 2.4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5.3A
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 30A
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 175°C
FET Feature Logic Level Gate
Height 1.75mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet