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SI5411EDU-T1-GE3

MOSFET -12V [email protected] -25A P-Ch T-FET


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI5411EDU-T1-GE3
  • Package: PowerPAK® ChipFET™ Single
  • Datasheet: PDF
  • Stock: 694
  • Description: MOSFET -12V [email protected] -25A P-Ch T-FET (Kg)

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Details

Tags

Parameters
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® ChipFET™ Single
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Pure Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Channels 1
Power Dissipation-Max 3.1W Ta 31W Tc
Element Configuration Single
Turn On Delay Time 30 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 8.2m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 6V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 105nC @ 8V
Rise Time 30ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet