English

All Products

View All >>
  • SI5429DU-T1-GE3

SI5429DU-T1-GE3

VISHAY SI5429DU-T1-GE3 MOSFET Transistor, P Channel, 12 A, -30 V, 0.0122 ohm, -10 V, -1 V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI5429DU-T1-GE3
  • Package: PowerPAK® ChipFET™ Dual
  • Datasheet: PDF
  • Stock: 757
  • Description: VISHAY SI5429DU-T1-GE3 MOSFET Transistor, P Channel, 12 A, -30 V, 0.0122 ohm, -10 V, -1 V (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® ChipFET™ Dual
Number of Pins 8
Packaging Cut Tape (CT)
Published 2013
Series TrenchFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 31W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 31W
Turn On Delay Time 35 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 15m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2320pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 50ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 12A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Height 850μm
Length 3.08mm
Width 1.98mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet