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  • SI7116DN-T1-E3

SI7116DN-T1-E3

MOSFET N-CH 40V 10.5A 1212-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7116DN-T1-E3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 265
  • Description: MOSFET N-CH 40V 10.5A 1212-8 (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 7.8mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.8m Ω @ 16.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 10.5A Ta
Gate Charge (Qg) (Max) @ Vgs 23nC @ 4.5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 16.4A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 40V
Height 1.04mm
Length 3.05mm
Width 3.05mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet