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  • SI7315DN-T1-GE3

SI7315DN-T1-GE3

MOSFET -150V .315ohm@-10V -8.9A P-Ch T-FET


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7315DN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 740
  • Description: MOSFET -150V .315ohm@-10V -8.9A P-Ch T-FET (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.8W Ta 52W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 315m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 75V
Current - Continuous Drain (Id) @ 25°C 8.9A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 9ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 7.5V 10V
Vgs (Max) ±30V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) -8.9A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage -150V
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet