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  • SI7370DP-T1-E3

SI7370DP-T1-E3

Trans MOSFET N-CH 60V 9.6A 8-Pin PowerPAK SO T/R


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7370DP-T1-E3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 845
  • Description: Trans MOSFET N-CH 60V 9.6A 8-Pin PowerPAK SO T/R (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Drain to Source Breakdown Voltage 60V
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Pulsed Drain Current-Max (IDM) 50A
Number of Pins 8
Weight 506.605978mg
Nominal Vgs 4 V
Height 1.04mm
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Length 4.9mm
Packaging Tape & Reel (TR)
Published 2008
Width 5.89mm
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Radiation Hardening No
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH SVHC No SVHC
Number of Terminations 5
ECCN Code EAR99
Resistance 11MOhm
RoHS Status ROHS3 Compliant
Terminal Finish Matte Tin (Sn)
Additional Feature FAST SWITCHING
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9.6A Ta
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 15.8A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9.6A
See Relate Datesheet