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  • SIA456DJ-T1-GE3

SIA456DJ-T1-GE3

Single N-Channel 200 V 1.38 Ohms Surface Mount Power Mosfet - SC-70-6


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIA456DJ-T1-GE3
  • Package: PowerPAK® SC-70-6
  • Datasheet: PDF
  • Stock: 979
  • Description: Single N-Channel 200 V 1.38 Ohms Surface Mount Power Mosfet - SC-70-6 (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.38Ohm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code S-XDSO-C3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3.5W Ta 19W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.38 Ω @ 750mA, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2.6A Tc
Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±16V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 2.6A
Threshold Voltage 1.4V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 2A
Max Junction Temperature (Tj) 150°C
Nominal Vgs 1.4 V
Height 800μm
Length 2.05mm
Width 2.05mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet