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  • SIHA14N60E-E3

SIHA14N60E-E3

Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220FP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHA14N60E-E3
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 386
  • Description: Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220FP (Kg)

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Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 309m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1205pF @ 100V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 13A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.309Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 32A
Max Junction Temperature (Tj) 150°C
Height 18.1mm
RoHS Status ROHS3 Compliant
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series E
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 147W Tc
Power Dissipation 147W
Turn On Delay Time 15 ns
FET Type N-Channel
See Relate Datesheet