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  • SIHG22N50D-E3

SIHG22N50D-E3

Trans MOSFET N-CH 500V 22A 3-Pin TO-247AC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHG22N50D-E3
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 300
  • Description: Trans MOSFET N-CH 500V 22A 3-Pin TO-247AC (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 312W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 312W
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 230m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1938pF @ 100V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Rise Time 42ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 22A
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 67A
DS Breakdown Voltage-Min 500V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet