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SIHP22N60S-E3

MOSFET 600V N-Channel Superjunction TO-220


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHP22N60S-E3
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 985
  • Description: MOSFET 600V N-Channel Superjunction TO-220 (Kg)

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Details

Tags

Parameters
Gate to Source Voltage (Vgs) 20V
Mount Through Hole
Drain to Source Breakdown Voltage 600V
Mounting Type Through Hole
Package / Case TO-220-3
Pulsed Drain Current-Max (IDM) 65A
Avalanche Energy Rating (Eas) 690 mJ
Number of Pins 3
Packaging Tube
Radiation Hardening No
Published 2010
REACH SVHC Unknown
JESD-609 Code e3
Pbfree Code yes
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 190mOhm
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Max Power Dissipation 250W
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2810pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 68ns
Fall Time (Typ) 59 ns
Turn-Off Delay Time 77 ns
Continuous Drain Current (ID) 22A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
See Relate Datesheet