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  • SIHP25N40D-E3

SIHP25N40D-E3

MOSFET N-CH 400V 25A TO-220AB


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHP25N40D-E3
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 868
  • Description: MOSFET N-CH 400V 25A TO-220AB (Kg)

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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 278W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1707pF @ 100V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Rise Time 57ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 37 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 25A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.17Ohm
Pulsed Drain Current-Max (IDM) 78A
DS Breakdown Voltage-Min 400V
Avalanche Energy Rating (Eas) 556 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet