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  • SIRA00DP-T1-GE3

SIRA00DP-T1-GE3

MOSFET 30V 1mOhm@10V 60A N-Ch G-IV


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIRA00DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 279
  • Description: MOSFET 30V 1mOhm@10V 60A N-Ch G-IV (Kg)

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Details

Tags

Parameters
Continuous Drain Current (ID) 60A
Threshold Voltage 1.1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 400A
Nominal Vgs 1.1 V
Height 1.07mm
Length 5.99mm
Width 5mm
Radiation Hardening No
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
REACH SVHC Unknown
Package / Case PowerPAK® SO-8
RoHS Status ROHS3 Compliant
Number of Pins 8
Weight 506.605978mg
Lead Free Lead Free
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 4mOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
JESD-30 Code R-PDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 6.25W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 6.25W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11700pF @ 15V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -16V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 67 ns
See Relate Datesheet