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  • SQJ469EP-T1_GE3

SQJ469EP-T1_GE3

VISHAY SQJ469EP-T1-GE3 MOSFET Transistor, P Channel, -32 A, -80 V, 0.021 ohm, -10 V, -2 V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQJ469EP-T1_GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 333
  • Description: VISHAY SQJ469EP-T1-GE3 MOSFET Transistor, P Channel, -32 A, -80 V, 0.021 ohm, -10 V, -2 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Supplier Device Package PowerPAK® SO-8
Weight 506.605978mg
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 100W Tc
Element Configuration Single
Power Dissipation 100W
Turn On Delay Time 16 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 25mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 40V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) -32A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -80V
Input Capacitance 5.1nF
Max Junction Temperature (Tj) 175°C
Drain to Source Resistance 45mOhm
Rds On Max 25 mΩ
Nominal Vgs -2 V
Height 1.267mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet