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  • SUD40N10-25-E3

SUD40N10-25-E3

Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) DPAK


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SUD40N10-25-E3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 930
  • Description: Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) DPAK (Kg)

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Details

Tags

Parameters
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3W Ta 136W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection DRAIN
Mount Surface Mount
Turn On Delay Time 8 ns
FET Type N-Channel
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 25m Ω @ 40A, 10V
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Number of Pins 3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Operating Temperature -55°C~175°C TJ
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Packaging Tape & Reel (TR)
Vgs (Max) ±20V
Fall Time (Typ) 80 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 40A
Threshold Voltage 3V
JEDEC-95 Code TO-252AA
Published 2014
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Series TrenchFET®
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 80 mJ
Nominal Vgs 3 V
JESD-609 Code e3
Radiation Hardening No
REACH SVHC No SVHC
Pbfree Code yes
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 25mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
See Relate Datesheet