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  • SUD50P06-15-GE3

SUD50P06-15-GE3

VISHAY - SUD50P06-15-GE3 - MOSFET Transistor, P Channel, -50 A, -60 V, 0.012 ohm, -10 V, -3 V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SUD50P06-15-GE3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 956
  • Description: VISHAY - SUD50P06-15-GE3 - MOSFET Transistor, P Channel, -50 A, -60 V, 0.012 ohm, -10 V, -3 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.5W Ta 113W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4950pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 175 ns
Continuous Drain Current (ID) -50A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 80A
Max Junction Temperature (Tj) 150°C
Height 2.507mm
RoHS Status ROHS3 Compliant
See Relate Datesheet